# HCFTVS5V0BULC

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HCFTVS5V0BULC from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 |  |  | V | IT = 1 mA | 2 |
| Reverse Leakage Current | IR |  |  | 0.1 | μA | VRWM = 5.0 V | 2 |
| Clamping Voltage (IRWM = 1 A, tp = 8/20 μs) |  |  | 13 |  | V | IRWM = 1 A, tp = 8/20 μs | 2 |
| Clamping Voltage (IRWM = 4 A, tp = 8/20 μs) |  |  | 25 |  | V | IRWM = 4 A, tp = 8/20 μs | 2 |
| TLP Clamping Voltage (IEC61000-4-2 Level 2 equivalent) | VCTLP |  | 26 |  | V | IPP = 8 A | 2 |
| TLP Clamping Voltage (IEC61000-4-2 Level 4 equivalent) | VCTLP |  | 38 |  | V | IPP = 16 A | 2 |
| Junction Capacitance | CJ |  | 0.5 |  | pF | VR = 0 V, f = 1 MHz | 2 |
| Reverse Working Voltage | VRWM |  |  | 5 | V |  | 2 |
| Peak Pulse Power | PPP |  |  | 100 | W | tp = 8/20 μs | 1 |
| Maximum Lead Temperature for Soldering | TL |  |  | 260 | °C | 10 s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum Junction Temperature | Tj |  |  | 150 | °C |  | 1 |
| ESD Immunity IEC61000-4-2 Contact Discharge |  | -8 |  | 8 | kV | IEC61000-4-2, contact discharge | 1 |
| ESD Immunity IEC61000-4-2 Air Discharge |  | -15 |  | 15 | kV | IEC61000-4-2, air discharge | 1 |
| EFT Immunity IEC61000-4-4 |  |  |  | 40 | A | IEC61000-4-4, 5/50 ns | 1 |

## CAD (KiCad official)

- Symbol: `HCFTVS5V0BULC`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hcftvs5v0bulc-etched.step` / `hcftvs5v0bulc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcftvs5v0bulc.step` / `hcftvs5v0bulc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009160095285248) (5 pp, sha256 `5b81203104534238`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcftvs5v0bulc-datasheet.pdf)