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HCEST23NC5VB

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23

HCEST23NC5VB from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Protected line terminal 1, connected through a TVS diode to common pin 3, with 5.0 V reverse working voltage and ±8 kV contact / ±15 kV air IEC 61000-4-2 ESD protection.
2 2 passive Protected line terminal 2, connected through a TVS diode to common pin 3, with 5.0 V reverse working voltage and ±8 kV contact / ±15 kV air IEC 61000-4-2 ESD protection.
3 3 passive Common node joining the two TVS diodes of pins 1 and 2, so the part protects one bidirectional line (pin 1 to pin 2) or two unidirectional lines referenced to pin 3.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Circuit Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 130 W tp = 8/20 µs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage Temperature Range Tstg -55 155 °C 1
Operating Temperature Range Top -40 125 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD contact discharge -8 8 kV IEC61000-4-2 contact discharge 1
IEC61000-4-2 ESD air discharge -15 15 kV IEC61000-4-2 air discharge 1
IEC61000-4-4 EFT current 40 A IEC61000-4-4 (5/50 ns) 1
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 5.6 V IT = 1 mA 2
Reverse Leakage Current IR 1 µA VRWM = 5.0 V 2
Clamping Voltage VC 8.5 V IRWM = 1 A, tp = 8/20 µs 2
Clamping Voltage VC 16 V IRWM = 8 A, tp = 8/20 µs 2
Junction Capacitance CJ 90 120 pF VR = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: HCEST23NC5VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hcest23nc5vb-etched.step / hcest23nc5vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hcest23nc5vb.step / hcest23nc5vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 a17f2ff434ad3330, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF