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HCESD882NC3V3B

Public Made by Adom

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HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HCESD882NC3V3B

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HCESD882NC3V3B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One of the two terminals of the single bi-directional line the device protects, rated at VRWM 3.3 V and ESD ±30 kV contact per IEC61000-4-2.
2 2 passive The other terminal of the single bi-directional line the device protects, rated at VRWM 3.3 V and ESD ±30 kV contact per IEC61000-4-2.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage (minimum) VBR 5 V @ IT = 1.0 mA (Note 1) 2
Reverse leakage current IR 0.05 A @ VRWM = 3.3 V 2
Clamping voltage VC 15 V @ IPP = 1 A (Note 2) 2
Clamping voltage at maximum peak pulse current VC 11 V @ MAX IPP (Note 2) 2
Maximum peak pulse current IPP 6.5 A (Note 2) 2
Peak pulse power (electrical table) PPK 100 W (Note 2) 2
Peak pulse power (tp = 8/20 μs) PPP 100 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C during 10 s 1
Storage temperature range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating temperature range Top -55 150 °C 1
ESD immunity, IEC61000-4-2 air discharge -30 30 KV IEC61000-4-2 (ESD) air discharge 1
ESD immunity, IEC61000-4-2 contact discharge -30 30 KV IEC61000-4-2 (ESD) contact discharge 1
Surge current, IEC61000-4-4 (EFT) 40 A IEC61000-4-4 (EFT) 1
Junction capacitance C 7 pF 2
Dynamic resistance RDYN 0.2 Ω @tp=100 ns (TLP) 2

CAD (KiCad official)

  • Symbol: HCESD882NC3V3B
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hcesd882nc3v3b-etched.step / hcesd882nc3v3b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hcesd882nc3v3b.step / hcesd882nc3v3b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 e07080a80d623dd2, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF