component
HCESD882NC12VU
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| hcesd882nc12vu-etched.glb | 17d ago |
| hcesd882nc12vu-etched.step | 17d ago |
| hcesd882nc12vu-hero.glb | 17d ago |
| hcesd882nc12vu-hero.overlay.json | 17d ago |
| hcesd882nc12vu.glb | 17d ago |
| hcesd882nc12vu.kicad_mod | 17d ago |
| hcesd882nc12vu.kicad_sym | 17d ago |
| hcesd882nc12vu.lbr | 17d ago |
| hcesd882nc12vu.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
HCESD882NC12VU
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HCESD882NC12VU from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 µs) | PPP | 150 | W | tp = 8/20 µs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -15 | 15 | KV | IEC 61000-4-2 air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -8 | 8 | KV | IEC 61000-4-2 contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | IEC 61000-4-4 (5/50 ns) | 1 | |||
| Reverse Working Voltage | VRWM | 12 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 13.3 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 1000 | nA | VRWM = 12V | 2 | ||
| Clamping Voltage | VC | 20 | 26 | V | IRWM = 4A, tp = 8/20 µs | 2 | |
| Junction Capacitance | CJ | 35 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
HCESD882NC12VU - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hcesd882nc12vu-etched.step/hcesd882nc12vu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hcesd882nc12vu.step/hcesd882nc12vu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
d69ae43546779082, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).