# HCESD882LC5VB-M

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HCESD882LC5VB-M from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode (stand-off voltage 5 V, ±15 kV contact / ±10 kV air IEC61000-4-2), connected to the protected line; polarity is not specified. |
| 2 | 2 | passive | Other terminal of the bi-directional ESD protection diode (stand-off voltage 5 V, ±15 kV contact / ±10 kV air IEC61000-4-2), connected to the protected line or ground; polarity is not specified. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse leakage current | IR |  |  | 1 | μA | @ VRWM | 2 |
| Breakdown voltage | VBR | 5.5 |  |  | V | IT = 1mA | 2 |
| Peak pulse power | PPK |  |  | 30 | W |  | 2 |
| Capacitance | C |  | 2.5 |  | pF | VR=0V, f=1MHz | 2 |
| Peak Pulse Power | PPP |  |  | 30 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `HCESD882LC5VB-M`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hcesd882lc5vb-m-etched.step` / `hcesd882lc5vb-m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcesd882lc5vb-m.step` / `hcesd882lc5vb-m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hcesd882lc5vb-m-datasheet.pdf) (5 pp, sha256 `e296c8c0e41aedbd`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcesd882lc5vb-m-datasheet.pdf)