component
HCESD1006UC5VB-M
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HCESD1006UC5VB-M
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HCESD1006UC5VB-M from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the unidirectional ESD protection diode (circuit diagram shows pins 1 and 2); working voltage 5V, breakdown 6.0V min at 1mA. |
| 2 | 2 | passive | Terminal 2 of the unidirectional ESD protection diode (circuit diagram shows pins 1 and 2); protects one data/control line with 0.4pF typical capacitance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 100 | nA | VRWM = 5V | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP = 1A, tp = 8/20μs | 2 | ||
| Clamping Voltage | VC | 15 | V | IPP = 4A, tp = 8/20μs | 2 | ||
| Junction Capacitance | CJ | 0.6 | 0.8 | pF | VR = 0V, f = 1MHz | 2 | |
| Peak Pulse Power | PPP | 60 | W | tp = 8/20μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -20 | 20 | kV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -20 | 20 | kV | contact discharge | 1 | ||
| IEC61000-4-4 EFT | 40 | A | 5/50 ns | 1 |
CAD (KiCad official)
- Symbol:
HCESD1006UC5VB-M - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hcesd1006uc5vb-m-etched.step/hcesd1006uc5vb-m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hcesd1006uc5vb-m.step/hcesd1006uc5vb-m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
2afa172d220d2e7a, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HCESD1006UC5VB-M
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HCESD1006UC5VB-M from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the unidirectional ESD protection diode (circuit diagram shows pins 1 and 2); working voltage 5V, breakdown 6.0V min at 1mA. |
| 2 | 2 | passive | Terminal 2 of the unidirectional ESD protection diode (circuit diagram shows pins 1 and 2); protects one data/control line with 0.4pF typical capacitance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Reverse Breakdown Voltage | VBR | 6 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 100 | nA | VRWM = 5V | 2 |
| Clamping Voltage | VC | | | 10 | V | IPP = 1A, tp = 8/20μs | 2 |
| Clamping Voltage | VC | | | 15 | V | IPP = 4A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | 0.6 | 0.8 | pF | VR = 0V, f = 1MHz | 2 |
| Peak Pulse Power | PPP | | | 60 | W | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -20 | | 20 | kV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -20 | | 20 | kV | contact discharge | 1 |
| IEC61000-4-4 EFT | | | | 40 | A | 5/50 ns | 1 |
## CAD (KiCad official)
- Symbol: `HCESD1006UC5VB-M`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hcesd1006uc5vb-m-etched.step` / `hcesd1006uc5vb-m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcesd1006uc5vb-m.step` / `hcesd1006uc5vb-m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hcesd1006uc5vb-m-datasheet.pdf) (5 pp, sha256 `2afa172d220d2e7a`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hcesd1006uc5vb-m-datasheet.pdf)