# HCESD1006UC3V3B

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HCESD1006UC3V3B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection diode terminal connected to the protected data/control line (3.3V reverse working voltage, 4.2V min breakdown at 1mA); the datasheet does not assign polarity. |
| 2 | 2 | passive | Second bi-directional ESD protection diode terminal, connected to ground or reference (3.3V reverse working voltage, 0.30pF typ junction capacitance at 0V, 1MHz); the datasheet does not assign polarity. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM |  |  | 3.3 | V |  | 2 |
| Reverse Breakdown Voltage | VBR | 4.2 |  |  | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR |  |  | 100 | nA | VRWM = 3.3V | 2 |
| Clamping Voltage | VC |  |  | 12 | V | IPP = 1A, tp = 8/20μs | 2 |
| Clamping Voltage | VC |  |  | 25 | V | IPP = 4A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ |  | 0.3 | 0.45 | pF | VR = 0V, f = 1MHz | 2 |
| Peak Pulse Power | PPP |  |  | 100 | W | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| IEC61000-4-2 ESD air discharge |  | -15 |  | 15 | kV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge |  | -8 |  | 8 | kV | contact discharge | 1 |
| IEC61000-4-4 EFT |  |  |  | 40 | A | 5/50 ns | 1 |

## CAD (KiCad official)

- Symbol: `HCESD1006UC3V3B`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hcesd1006uc3v3b-etched.step` / `hcesd1006uc3v3b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcesd1006uc3v3b.step` / `hcesd1006uc3v3b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hcesd1006uc3v3b-datasheet.pdf) (5 pp, sha256 `3496817b95166503`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcesd1006uc3v3b-datasheet.pdf)