component

HCESD1006NC3V3B

Public Made by Adom

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HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionhcesd1006nc3v3bfactory-2.0.0extractor-text

Changed since verified HCESD1006NC3V3B

by Ray · last 2 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 2 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HCESD1006NC3V3B · DFN1006-2L · 2 pins
  • ✓copper: 2 copper pads, none touching another net
  • ✓datasheet: unpolarised two-terminal part: pins 1 and 2 by library convention, no names to check
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: D_SOD-882
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-xeuiy07r/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 2 pins = 2 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 2 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hcesd1006nc3v3b.kicad_sym✓ hcesd1006nc3v3b.kicad_mod✓ hcesd1006nc3v3b.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers hcesd1006nc3v3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcesd1006nc3v3b-etched.glb Publish 0.1.0 · Ray 7d ago
hcesd1006nc3v3b-etched.step hcesd1006nc3v3b: factory component page (tier=lcsc) · Ray 7d ago
hcesd1006nc3v3b-hero.glb hcesd1006nc3v3b: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
hcesd1006nc3v3b-hero.overlay.json Publish 0.1.0 · Ray 7d ago
hcesd1006nc3v3b.glb Publish 0.1.0 · Ray 7d ago
hcesd1006nc3v3b.kicad_mod Publish 0.1.0 · Ray 7d ago
hcesd1006nc3v3b.kicad_sym hcesd1006nc3v3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcesd1006nc3v3b.lbr hcesd1006nc3v3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcesd1006nc3v3b.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 2 pins · Ray 7d ago

HCESD1006NC3V3B

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HCESD1006NC3V3B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bi-directional ESD protection clamp for a single protected line, which the datasheet describes as protecting one bi-directional line with a 3.3 V VRWM and 100 W peak pulse power at 8/20 µs.
2 2 passive The second terminal of the bi-directional ESD protection clamp for the same protected line, which the datasheet describes as protecting one bi-directional line with a 3.3 V VRWM and 100 W peak pulse power at 8/20 µs.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 100 W tp = 8/20 µs 1
Maximum lead temperature for soldering TL 260 °C during 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 (ESD) air discharge -30 30 kV IEC61000-4-2 air discharge 1
IEC61000-4-2 (ESD) contact discharge -30 30 kV IEC61000-4-2 contact discharge 1
IEC61000-4-4 (EFT) 40 A IEC61000-4-4 (EFT) 1
Breakdown voltage VBR VBR 3.3 V IT = 1.0 mA 2
Breakdown voltage VBR VBR 5 V IT = 1.0 mA 2
Reverse leakage current IR IR 0.05 A @ VRWM 2
Clamping voltage VC at maximum IPP VC 11 V @ MAX IPP (Note 2) 2
Peak pulse current IPP IPP 9 A (Note 2) 2
Peak pulse power PPK PPK 100 W (Note 2) 2
Dynamic resistance RDYN RDYN 0.2 Ω @ tp = 100 ns (TLP) 2
Dynamic resistance RDYN RDYN 6.5 Ω @ tp = 100 ns (TLP) 2
Line capacitance C C 7 pF 2
Clamping voltage VC at IPP = 1 A VC 15 V @ IPP = 1 A (Note 2) 2

CAD (KiCad official)

  • Symbol: HCESD1006NC3V3B
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hcesd1006nc3v3b-etched.step / hcesd1006nc3v3b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hcesd1006nc3v3b.step / hcesd1006nc3v3b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 72b8429a9389e05c, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF