component

HCDDFN2-T3.3B

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
viewers hcddfn2-t3-3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcddfn2-t3-3b-etched.glb Publish 0.1.0 · Ray 24d ago
hcddfn2-t3-3b-etched.step hcddfn2-t3-3b: factory component page (tier=lcsc) · Ray 24d ago
hcddfn2-t3-3b-hero.glb hcddfn2-t3-3b: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
hcddfn2-t3-3b-hero.overlay.json Publish 0.1.0 · Ray 24d ago
hcddfn2-t3-3b.glb Publish 0.1.0 · Ray 24d ago
hcddfn2-t3-3b.kicad_mod Publish 0.1.0 · Ray 24d ago
hcddfn2-t3-3b.kicad_sym hcddfn2-t3-3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcddfn2-t3-3b.lbr hcddfn2-t3-3b: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hcddfn2-t3-3b.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json Set visibility: public · Ray 24d ago
README.md Publish 0.1.0 · Ray 24d ago

HCDDFN2-T3.3B

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HCDDFN2-T3.3B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation.
2 2 passive Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage VRWM 3.3 V 2
Reverse leakage current IR 0.05 A @ VRWM 2
Clamping voltage VC 11 V @ MAX IPP (Note 2) 2
Peak pulse current IPP 6.5 A (Note 2) 2
Peak pulse power PPK 100 W (Note 2) 2
Dynamic resistance RDYN 0.2 Ω @ tp = 100 ns (TLP) 2
Peak Pulse Power PPP 100 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage temperature range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD withstand, air discharge -30 30 KV IEC61000-4-2 (ESD) air discharge 1
ESD withstand, contact discharge -30 30 KV IEC61000-4-2 (ESD) contact discharge 1
EFT current 40 A IEC61000-4-4 (EFT) 1

CAD (KiCad official)

  • Symbol: HCDDFN2-T3.3B
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hcddfn2-t3-3b-etched.step / hcddfn2-t3-3b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hcddfn2-t3-3b.step / hcddfn2-t3-3b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 76adceba9a32db42, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary two-terminal convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF