# HCD65R360

**HUAKE** · MOSFETs · TO-252

HCD65R360 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a threshold of 2.0 V to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is rated at 650 V and continuous drain current at 11.0 A (Tc=25C). |
| 3 | S | passive | Source; the body diode continuous forward current is 11.0 A maximum and the pulsed current is 44 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `HCD65R360`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hcd65r360-etched.step` / `hcd65r360-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcd65r360.step` / `hcd65r360.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAKE datasheet](docs/hcd65r360-datasheet.pdf) (6 pp, sha256 `266885f4b9871fc1`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcd65r360-datasheet.pdf)