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HC4D40120H

Public Made by Adom

by adom

HXY MOSFET Schottky Barrier Diodes (SBD), TO-247-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HC4D40120H

HXY MOSFET · Schottky Barrier Diodes (SBD) · TO-247-2L

HC4D40120H from HXY MOSFET, in a TO-247-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN1 passive Terminal 1 of the 1200 V, 40 A silicon carbide Schottky diode in TO-247-2L; the text does not state whether it is anode or cathode.
2 PIN2 passive Terminal 2 of the 1200 V, 40 A silicon carbide Schottky diode in TO-247-2L; the text does not state whether it is anode or cathode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-2L
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 1200 V TC = 25°C 1
DC Blocking Voltage VDC 1200 V TC = 25°C 1
Continuous Forward Current IF 128 A TJ = 25 °C 1
Continuous Forward Current IF 88 A TJ = 100 °C 1
Continuous Forward Current IF 41 A TJ = 155 °C 1
Repetitive Peak Forward Surge Current IFRM 161 A Tc = 25 °C, tp = 10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 91 A Tc = 110 °C, tp = 10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 247 A Tc = 25 °C, tp = 10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 245 A Tc = 110 °C, tp = 10 ms, Half Sine Pulse 1
Power Dissipation Ptot 667 W Tc = 25 °C 1
Power Dissipation Ptot 289 W Tc = 110 °C 1
i2t Value ∫i2t 305 A2s Tc = 25 °C, tp = 10 ms 1
i2t Value ∫i2t 300 A2s Tc = 110 °C, tp = 10 ms 1
Forward Voltage VF 1.5 1.8 V IF = 40 A, TJ = 25 °C 2
Forward Voltage VF 2.2 3 V IF = 40 A, TJ = 175 °C 2
Reverse Current IR 45 300 µA VR = 1200 V, TJ = 25 °C 2
Reverse Current IR 75 500 µA VR = 1200 V, TJ = 175 °C 2
Total Capacitive Charge QC 167 nC VR = 800 V, TJ = 25 °C 2
Total Capacitance C 2809 pF VR = 0 V, TJ = 25 °C, f = 1 MHz 2
Total Capacitance C 174 pF VR = 400 V, TJ = 25 °C, f = 1 MHz 2
Total Capacitance C 145 pF VR = 800 V, TJ = 25 °C, f = 1 MHz 2
Capacitance Stored Energy EC 36 µJ VR = 800 V 2
Thermal Resistance, Junction to Case Rθ,JC 0.225 °C / W Typ. 2
Operating Junction & Storage Temperature TJ, Tstg -55 175 °C 2
Maximum Processing Temperature TPROC 325 °C 10 min. Maximum 2

CAD (KiCad official)

  • Symbol: HC4D40120H
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2L (KiCad packages3D, STEP)
  • 3D model files: hc4d40120h-etched.step / hc4d40120h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc4d40120h.step / hc4d40120h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 b5d74a07cd965258, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF