# HC3M0060065K

**HXY MOSFET** · MOSFETs · TO-247-4L

HC3M0060065K from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, also the TAB, rated for VDSS 650 V at TC = 25 ˚C. |
| 2 | Power Source | passive | Main power source terminal carrying the load current of the MOSFET. |
| 3 | Driver Source | passive | Separate driver source pin for the gate drive return, optimized to keep the gate loop apart from the power current. |
| 4 | Gate | input | Gate control input with recommended turn-on voltage 15 V and turn-off voltage -4 V; transient range -8/+19 V under events shorter than 100 ns. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage, TC = 25 C | VDSS |  |  | 650 | V | TC = 25 C | 1 |
| Gate - Source voltage (transient) | VGS | -8 |  | 19 | V | Under transient events < 100 ns | 1 |
| Continuous Drain Current | ID |  |  | 37 | A | VGS = 15 V, TC = 25 C | 1 |
| Continuous Drain Current | ID |  |  | 27 | A | VGS = 15 V, TC = 100 C | 1 |
| Pulsed Drain Current | ID(pulse) |  |  | 99 | A | Pulse width tP limited by Tjmax | 1 |
| Power Dissipation | PD |  |  | 150 | W | TC=25 C, TJ = 175 C | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -40 |  | 175 | C |  | 1 |
| Solder Temperature | TL |  |  | 260 | C | 1.6mm (0.063in) from case for 10s | 1 |
| Mounting Torque | Md |  |  | 1 | Nm | M3 or 6-32 screw | 1 |
| Mounting Torque | Md |  |  | 8.8 | lbf-in | M3 or 6-32 screw | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0 V, ID = 100 μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.6 | V | VDS = VGS, ID = 5 mA, Fig. 11 | 2 |
| Gate Threshold Voltage at TJ = 175C | VGS(th) |  | 1.9 |  | V | VDS = VGS, ID = 5 mA, TJ = 175ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS |  | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | 42 | 60 | 79 | mΩ | VGS = 15 V, ID = 13.2 A, Fig. 4, 5,6 | 2 |
| Drain-Source On-State Resistance at TJ = 175C | RDS(on) |  | 80 |  | mΩ | VGS = 15 V, ID = 13.2 A, TJ = 175ºC | 2 |
| Transconductance | gfs |  | 10 |  | S | VDS= 20 V, IDS= 13.2 A, Fig. 7 | 2 |
| Transconductance at TJ = 175C | gfs |  | 9 |  | S | VDS= 20 V, IDS= 13.2 A, TJ = 175ºC | 2 |
| Input Capacitance | Ciss |  | 1020 |  | pF | VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18 | 2 |
| Output Capacitance | Coss |  | 80 |  | pF | VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18 | 2 |
| Reverse Transfer Capacitance | Crss |  | 9 |  | pF | VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18 | 2 |
| Effective Output Capacitance (Energy Related) | Co(er) |  | 95 |  | pF | VGS = 0 V, VDS = 0V to 400 V | 2 |
| Effective Output Capacitance (Time Related) | Co(tr) |  | 132 |  | pF | VGS = 0 V, VDS = 0V to 400 V | 2 |
| Coss Stored Energy | Eoss |  | 15 |  | μJ | VDS = 600 V, 1 MHz, Fig. 16 | 2 |
| Turn-On Switching Energy (Body Diode) | EON |  | 70 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25 | 2 |
| Turn Off Switching Energy (Body Diode) | EOFF |  | 5 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25 | 2 |
| Turn-On Switching Energy (External SiC Diode) | EON |  | 67 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = External SiC Diode, Fig. 25 | 2 |
| Turn Off Switching Energy (External SiC Diode) | EOFF |  | 6 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = External SiC Diode, Fig. 25 | 2 |
| Turn-On Delay Time | td(on) |  | 8 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26 | 2 |
| Rise Time | tr |  | 11 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26 | 2 |
| Turn-Off Delay Time | td(off) |  | 17 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26 | 2 |
| Fall Time | tf |  | 5 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26 | 2 |
| Internal Gate Resistance | RG(int) |  | 3 |  | Ω | f = 1 MHz, VAC = 25 mV | 2 |
| Gate to Source Charge | Qgs |  | 13 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Per IEC60747-8-4 pg 21 | 2 |
| Gate to Drain Charge | Qgd |  | 17 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Fig. 12 | 2 |
| Total Gate Charge | Qg |  | 46 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Per IEC60747-8-4 pg 21 | 2 |
| Gate-Source Recommended Turn-On Voltage | VGSon |  | 15 |  | V | Static, Fig. 29 | 2 |
| Gate-Source Recommended Turn-Off Voltage | VGSoff |  | -4 |  | V | Static, Fig. 29 | 2 |
| Diode Forward Voltage at TJ = 25 C | VSD |  | 5.1 |  | V | VGS = -4 V, ISD = 6.6 A, TJ = 25 °C, Fig. 8, 9, 10 | 3 |
| Diode Forward Voltage at TJ = 175 C | VSD |  | 4.8 |  | V | VGS = -4 V, ISD = 6.6 A, TJ = 175 °C | 3 |
| Continuous Diode Forward Current | IS |  | 23 |  | A | VGS = -4 V, TC = 25C | 3 |
| Diode pulse Current | IS, pulse |  | 99 |  | A | VGS = -4 V, pulse width tP limited by Tjmax | 3 |
| Reverse Recover time (dif/dt = 4500 A/µs) | trr |  | 11 |  | ns | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C | 3 |
| Reverse Recovery Charge (dif/dt = 4500 A/µs) | Qrr |  | 151 |  | nC | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C | 3 |
| Peak Reverse Recovery Current (dif/dt = 4500 A/µs) | Irrm |  | 27 |  | A | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C | 3 |
| Reverse Recover time (dif/dt = 2400 A/µs) | trr |  | 16 |  | ns | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C | 3 |
| Reverse Recovery Charge (dif/dt = 2400 A/µs) | Qrr |  | 110 |  | nC | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C | 3 |
| Peak Reverse Recovery Current (dif/dt = 2400 A/µs) | Irrm |  | 12 |  | A | VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C | 3 |
| Thermal Resistance from Junction to Case | RθJC |  | 0.99 |  | °C/W | Fig. 21 | 3 |
| Thermal Resistance From Junction to Ambient | RθJA |  | 40 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `HC3M0060065K`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `hc3m0060065k-etched.step` / `hc3m0060065k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hc3m0060065k.step` / `hc3m0060065k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hc3m0060065k-datasheet.pdf) (12 pp, sha256 `cf98f920ac53c591`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hc3m0060065k-datasheet.pdf)