component
HC3M0015065K
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHC3M0015065K
HXY MOSFET · MOSFETs · TO-247-4L
HC3M0015065K from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain pin, also the metal tab, of the SiC MOSFET with VDSmax of 650 V. |
| 2 | Power Source | passive | Power source pin, kept separate from the driver source pin (pin 3) as stated by the package feature 'Optimized package with separate driver source pin'. |
| 3 | Driver Source | passive | Driver source pin, provided separately from the power source pin (pin 2) in this package. |
| 4 | Gate | input | Gate pin; VGSmax is -8/+19 V, with recommended turn-off/turn-on gate voltage of -4V...0V / +15V per Note 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source Voltage | VDSmax | 650 | V | 1 | |||
| Gate - Source voltage | VGSmax | -8 | 19 | V | 1 | ||
| Continuous Drain Current | ID | 120 | A | VGS = 15 V, TC = 25˚C | 1 | ||
| Continuous Drain Current | ID | 96 | A | VGS = 15 V, TC = 100˚C | 1 | ||
| Pulsed Drain Current | ID(pulse) | 418 | A | Pulse width tP limited by Tjmax | 1 | ||
| Power Dissipation | PD | 416 | W | TC=25˚C, TJ = 175 ˚C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 175 | ˚C | 1 | ||
| Solder Temperature | TL | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 | ||
| Mounting Torque | Md | 8.8 | Nm | M3 or 6-32 screw | 1 | ||
| Recommended turn-off gate voltage | VGS | -4 | 0 | V | Recommended turn off gate voltage (Note 1) | 1 | |
| Recommended turn-on gate voltage | VGS | 15 | V | Recommended turn on gate voltage (Note 1) | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.6 | V | VDS = VGS, ID = 15.5 mA, Fig. 11 | 2 |
| Gate Threshold Voltage at TJ=175ºC | VGS(th) | 1.9 | V | VDS = VGS, ID = 15.5 mA, TJ = 175ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 | |
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 10.5 | 15 | 21 | mΩ | VGS = 15 V, ID = 55.8A, Fig. 4, 5,6 | 2 |
| Drain-Source On-State Resistance at TJ=175ºC | RDS(on) | 20 | mΩ | VGS = 15 V, ID = 55.8A, TJ = 175ºC | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0 V, ID = 100 μA | 2 | ||
| Transconductance | gfs | 42 | S | VDS= 20 V, IDS= 55.8 A, Fig. 7 | 2 | ||
| Transconductance at TJ=175ºC | gfs | 40 | S | VDS= 20 V, IDS= 55.8 A, TJ = 175ºC | 2 | ||
| Input Capacitance | Ciss | 5011 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC= 25 mV, Fig. 17, 18 | 2 | ||
| Output Capacitance | Coss | 289 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC= 25 mV, Fig. 17, 18 | 2 | ||
| Reverse Transfer Capacitance | Crss | 31 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC= 25 mV, Fig. 17, 18 | 2 | ||
| Effective Output Capacitance (Energy Related) | Co(er) | 357 | pF | Note: 3 | 2 | ||
| Effective Output Capacitance (Time Related) | Co(tr) | 516 | pF | Note: 3 | 2 | ||
| Coss Stored Energy | Eoss | 29 | μJ | Fig. 16 | 2 | ||
| Turn-On Switching Energy (Body Diode) | EON | 401 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25 | 2 | ||
| Turn Off Switching Energy (Body Diode) | EOFF | 254 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25 | 2 | ||
| Turn-On Switching Energy (External Diode) | EON | 234 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = External SiC DIODE, Fig. 25 | 2 | ||
| Turn Off Switching Energy (External Diode) | EOFF | 303 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = External SiC DIODE, Fig. 25 | 2 | ||
| Turn-On Delay Time | td(on) | 23 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, Fig. 26 | 2 | ||
| Rise Time | tr | 32 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, Fig. 26 | 2 | ||
| Turn-Off Delay Time | td(off) | 57 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, Fig. 26 | 2 | ||
| Fall Time | tf | 15 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, Fig. 26 | 2 | ||
| Internal Gate Resistance | RG(int) | 1.5 | Ω | f = 1 MHz, VAC= 25 mV | 2 | ||
| Gate to Source Charge | Qgs | 53 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, Per IEC60747-8-4 pg 21 | 2 | ||
| Gate to Drain Charge | Qgd | 58 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, Fig. 12 | 2 | ||
| Total Gate Charge | Qg | 188 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, Fig. 12 | 2 | ||
| Diode Forward Voltage | VSD | 4.7 | V | VGS = -4 V, ISD = 27.9 A, TJ = 25 °C, Fig. 8, 9, 10 | 3 | ||
| Diode Forward Voltage at TJ=175 °C | VSD | 4.2 | V | VGS = -4 V, ISD = 27.9 A, TJ = 175 °C | 3 | ||
| Continuous Diode Forward Current | IS | 79 | A | VGS = -4 V, TC = 25˚C | 3 | ||
| Diode pulse Current | IS, pulse | 223 | A | VGS = -4 V, pulse width tP limited by Tjmax | 3 | ||
| Reverse Recover time | trr | 22 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 4000 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 510 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 4000 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 39 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 4000 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recover time | trr | 26 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 2500 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 432 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 2500 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 28 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 2500 A/µs, TJ = 175 °C | 3 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.35 | °C/W | Fig. 21 | 3 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
HC3M0015065K - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
hc3m0015065k-etched.step/hc3m0015065k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hc3m0015065k.step/hc3m0015065k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (12 pp, sha256
c63189156267b921, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).