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HC3D10065G

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HC3D10065G

HXY MOSFET · SiC Diodes · TO-263

HC3D10065G from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiC Schottky diode (rated 650 V repetitive peak reverse voltage), connected internally to the CASE (tab) per the symbol on page 1.
2 A passive Anode of the SiC Schottky diode (10 A forward current rating, VF 1.3 V typ at IF=10 A, Tj=25°C).
3 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-263
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 650 V 2
DC Peak Reverse Voltage VR 650 V 2
Surge Peak Reverse Voltage VRSM 650 V 2
Continuous Forward Current IF 30 A TC = 25°C 2
Continuous Forward Current IF 15 A TC = 135°C 2
Continuous Forward Current IF 10 A TC = 160°C 2
Repetitive Peak Forward Surge Current IFRM 45 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 27 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 80 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 70 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 31.7 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 24.3 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Power dissipation Ptot 92 W TC = 25°C 2
Power dissipation Ptot 40 W TC = 110°C 2
Operating junction range Tj -55 175 °C 2
Storage temperature range Tstg -55 150 °C 2
Reverse Current IR 50 µA VR = 650V 3
Reverse Current IR 200 µA Tj = 175°C 3
Forward Voltage VF 1.3 1.6 V IF = 10A, Tj = 25°C 3
Forward Voltage VF 1.5 V IF = 10A, Tj = 175°C 3
Total Capacitance C 561 pF Tj = 25°C, f = 1MHz, VR = 0V 3
Total Capacitance C 55 pF Tj = 25°C, f = 1MHz, VR = 200V 3
Total Capacitance C 43 pF Tj = 25°C, f = 1MHz, VR = 400V 3
Total Capacitive Charge QC 27 nC QC = ∫(0 to VR) C(V) dV 3
Thermal resistance, junction to case RthJC 1.62 °C/W 2

CAD (KiCad official)

  • Symbol: HC3D10065G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: hc3d10065g-etched.step / hc3d10065g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc3d10065g.step / hc3d10065g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 07690c087e60ea82, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF