component
HC3D05120E
Public Made by Adomby adom
HXY MOSFET SiC Diodes, TO-252-2L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+92−8@@ -1,13 +1,102 @@ {+ "schema_version": 1,+ "type": "component", "slug": "hc3d05120e",+ "title": "HC3D05120E",+ "brief": "HXY MOSFET SiC Diodes, TO-252-2L. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "HXY MOSFET SiC Diodes, TO-252-2L. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "silicon carbide (sic) devices", "hc3d05120e" ],+ "component": {+ "mpn": "HC3D05120E",+ "manufacturer": "HXY MOSFET",+ "package": "TO-252-2L",+ "pin_count": 3,+ "category": "Silicon Carbide (SiC) Devices",+ "subcategory": "SiC Diodes",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011182702325760",+ "parts": {+ "symbol": "hc3d05120e.kicad_sym",+ "footprint": "hc3d05120e.kicad_mod",+ "model_3d": "hc3d05120e.glb",+ "model_3d_step": "hc3d05120e.step",+ "lbr": "hc3d05120e.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "A",+ "type": "passive",+ "description": "Anode of the SiC Schottky diode. Connect to the positive terminal of the reverse-biased circuit; conducts forward current up to IF = 18 A (TC = 25 \u00b0C)."+ },+ {+ "number": "2",+ "name": "K",+ "type": "passive",+ "description": "Cathode of the SiC Schottky diode. Electrically common with the exposed metal tab/CASE. Rated VRRM = 1200 V."+ },+ {+ "number": "TAB",+ "name": "K/CASE",+ "type": "passive",+ "description": "Exposed metal tab / CASE, electrically the cathode. Also serves as the primary thermal path (RthJC = 1.55 \u00b0C/W)."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011182702325760",+ "pages": 6,+ "sha256": "7ce14c5543467849",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "HXY MOSFET",+ "Package": "TO-252-2L",+ "Category": "Silicon Carbide (SiC) Devices",+ "Pins": "3"+ }+ },+ "variants": [+ {+ "mpn": "HC3D05120E",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "hc3d05120e"+ ],+ "discovery_pitch": "HC3D05120E (HXY MOSFET) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +114,5 @@ "docs/hc3d05120e-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }