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HC2M0045170P

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshc2m0045170pfactory-2.0.0extractor-text

Changed since verified HC2M0045170P

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HC2M0045170P · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-302e1ydp/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hc2m0045170p.kicad_sym✓ hc2m0045170p.kicad_mod✓ hc2m0045170p.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HC2M0045170P

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HC2M0045170P from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also connected to the mounting tab; rated for VDS max 1700 V (VGS = 0 V, ID = 100 μA) with continuous drain current of 75 A at TC = 25 °C.
2 Power Source passive Main power source terminal of the MOSFET, carrying the high-current drain-source path; the datasheet gives no separate pin-level limit beyond the device ratings.
3 Driver Source passive Separate driver source pin for the gate drive return, provided so that the gate loop is isolated from the power current path (per the 'separate driver source pin' feature).
4 Gate input Gate input with recommended operational range of -5/+20 V (VGSop) and absolute maximum of -10/+25 V (VGSmax, AC f > 1 Hz).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSmax 1700 V VGS = 0 V, ID = 100 μA 1
Gate-Source Voltage VGSmax -10 25 V Absolute maximum values, AC (f >1 Hz) 1
Gate-Source Voltage (recommended operational) VGSop -5 20 V Recommended operational values 1
Continuous Drain Current ID 75 A VGS = 20 V, TC = 25 °C 1
Continuous Drain Current ID 48 A VGS = 20 V, TC = 100 °C 1
Pulsed Drain Current ID(pulse) 160 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 338 W TC = 25 °C, TJ = 150 °C 1
Operating Junction and Storage Temperature TJ, Tstg -40 150 °C 1
Solder Temperature TL 260 °C 1.6mm (0.063”) from case for 10s 1
Drain-Source Breakdown Voltage V(BR)DSS 1700 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 18mA, Fig. 11 2
Gate Threshold Voltage at TJ = 150 °C VGS(th) 2.5 V VDS = VGS, ID = 18mA, TJ = 150 °C 2
Zero Gate Voltage Drain Current IDSS 2 100 μA VDS = 1700 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 600 nA VGS = 20 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 40 70 mΩ VGS = 20 V, ID = 50 A, Fig. 4,5,6 2
Drain-Source On-State Resistance at TJ = 150 °C RDS(on) 80 mΩ VGS = 20 V, ID = 50 A, TJ = 150 °C 2
Continuous Diode Forward Current IS 76 A VGS = -5 V, TC = 25 °C 3
Diode Pulse Current IS, pulse 160 A VGS = -5 V, pulse width tP limited by Tjmax 3
Thermal Resistance from Junction to Case RθJC 0.22 0.37 °C/W Fig. 21 3
Thermal Resistance from Junction to Ambient RθJC 40 °C/W 3

CAD (KiCad official)

  • Symbol: HC2M0045170P
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hc2m0045170p-etched.step / hc2m0045170p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc2m0045170p.step / hc2m0045170p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 b1b60cb6e5c59bb2, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF