component

HC1M320120D

Public Made by Adom

by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshc1m320120dfactory-2.0.0extractor-text

Verified HC1M320120D

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HC1M320120D · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-bmpbjhq4/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hc1m320120d.kicad_sym✓ hc1m320120d.kicad_mod✓ hc1m320120d.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

HC1M320120D

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HC1M320120D from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the datasheet gives recommended VGS of -4/+18 V and absolute maximum VGS of -8/+22 V.
2 Drain passive Drain terminal; the part is rated for 1200 V drain-source voltage and 20 A pulsed drain current at TC = 25 °C.
3 Source passive Source terminal, serving as the power source return; the datasheet does not assign a separate driver-source pin.
4 Drain passive Drain terminal, electrically tied to pin 2; the datasheet rates the device at 1200 V drain-source voltage and 20 A pulsed drain current at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Drain-source voltage VDS 1200 V 1
Continuous drain current ID 7.6 A TC = 25°C, VGS = 18V 1
Continuous drain current ID 5.5 A TC = 100°C, VGS = 18V 1
Pulsed drain current ID pulse 20 A TC = 25°C, tp limited by Tjmax 1
Gate-source voltage VGS -4 18 V 1
Gate-source voltage (absolute maximum values) VGSmax -8 22 V 1
Power dissipation Ptot 60 W TC = 25°C 1
Thermal resistance, junction to case RthJC 2.5 °C/W 2
Thermal resistance, junction to ambient RthJA 40 °C/W 2
Drain-source breakdown voltage BVDSS 1200 V VGS=0V, ID=100uA 2
Gate threshold voltage VGS(th) 2 3.1 4 V VDS=VGS, ID=1mA 2
Drain-source on-state resistance RDS(on) 320 450 mΩ VGS=18V, ID=3.6A, TJ=25°C 2
Drain-source on-state resistance RDS(on) 480 mΩ VGS=18V, ID=3.6A, TJ=175°C 2
Transconductance gfs 5 S VDS=20V, ID=3.6A 2
Zero gate voltage drain current IDSS 1 μA VDS=1200V, VGS=0V, TC=25°C 2
Gate-source leakage current IGSS 100 nA VGS=18V, VDS=0V 2
Body diode forward voltage VSD 3.2 V VGS=0V, ISD=4A, TJ=25°C 3
Body diode forward voltage VSD 3.6 V VGS=0V, ISD=4A, TJ=175°C 3
Body diode reverse recovery time trr 12.3 ns VR=800V, VGS=0V, ID=3.6A, di/dt=800A/μS, TJ=25°C 3

CAD (KiCad official)

  • Symbol: HC1M320120D
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hc1m320120d-etched.step / hc1m320120d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc1m320120d.step / hc1m320120d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 d1c05f3471bf2ba8, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF