component
HBZT52C8V213F
Public Made by Adomby adom
HXY MOSFET Zener Diodes, SOD-123. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| hbzt52c8v213f-etched.glb | 7d ago |
| hbzt52c8v213f-etched.step | 7d ago |
| hbzt52c8v213f-hero.glb | 7d ago |
| hbzt52c8v213f-hero.overlay.json | 7d ago |
| hbzt52c8v213f.glb | 7d ago |
| hbzt52c8v213f.kicad_mod | 7d ago |
| hbzt52c8v213f.kicad_sym | 7d ago |
| hbzt52c8v213f.lbr | 7d ago |
| hbzt52c8v213f.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
HBZT52C8V213F
HXY MOSFET · Zener Diodes · SOD-123
HBZT52C8V213F from HXY MOSFET, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage (nominal 8.2 V) | VZ | 7.79 | 8.2 | 8.61 | V | @ IZT = 5 mA | 1 |
| Maximum Zener impedance ZZT | ZZT | 14.2 | Ω | @ IZT = 5 mA, f = 1 kHz (Note 3) | 1 | ||
| Maximum Zener impedance ZZK | ZZK | 76 | Ω | @ IZK = 1.0 mA | 1 | ||
| Maximum reverse current | IR | 0.56 | µA | @ VR = 5.0 V | 1 | ||
| Typical temperature coefficient of VZ | 3.2 | 6.2 | mV/°C | @ IZTC = 5 mA | 1 | ||
| Forward voltage | VF | 0.9 | V | @ IF = 10 mA (Note 2) | 1 | ||
| Power dissipation (on ceramic PCB, Note 1) | Pd | 500 | mW | Device mounted on ceramic PCB 7.6 mm x 9.4 mm x 0.87 mm, pad area 25 mm² (Note 1) | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 | |||
| Operation junction temperature range | TJ | -40 | 125 | ℃ | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
HBZT52C8V213F - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
hbzt52c8v213f-etched.step/hbzt52c8v213f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbzt52c8v213f.step/hbzt52c8v213f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (3 pp, sha256
c6ec5341f803bef5, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).