component
HBZT52C4V7S7F
Public Made by Adomby adom
HXY MOSFET Zener Diodes, SOD-323. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HBZT52C4V7S7F
HXY MOSFET · Zener Diodes · SOD-323
HBZT52C4V7S7F from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage (nominal, range at IZT) | VZ | 4.4 | 4.7 | 5 | V | @ IZT = 5 mA | 1 |
| Maximum Zener impedance at IZT | ZZT | 80 | Ω | @ IZT = 5 mA; f = 1kHz (Note 3) | 1 | ||
| Maximum Zener impedance at IZK | ZZK | 500 | Ω | @ IZK = 1.0 mA | 1 | ||
| Maximum reverse current | IR | 3 | µA | @ VR = 2 V (Note 2) | 1 | ||
| Typical temperature coefficient | TC | -3.5 | mV/°C | @ IZTC = 5 mA | 1 | ||
| Forward voltage | VF | 0.9 | V | @ IF = 10mA (Note 2) | 1 | ||
| Power dissipation | Pd | 200 | mW | Note 1: device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² | 1 | ||
| Operation junction temperature range | TJ | -40 | 125 | ℃ | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HBZT52C4V7S7F - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
hbzt52c4v7s7f-etched.step/hbzt52c4v7s7f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbzt52c4v7s7f.step/hbzt52c4v7s7f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (3 pp, sha256
c3d44c26337a2b79, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HBZT52C4V7S7F
**HXY MOSFET** · Zener Diodes · SOD-323
HBZT52C4V7S7F from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage (nominal, range at IZT) | VZ | 4.4 | 4.7 | 5 | V | @ IZT = 5 mA | 1 |
| Maximum Zener impedance at IZT | ZZT | | | 80 | Ω | @ IZT = 5 mA; f = 1kHz (Note 3) | 1 |
| Maximum Zener impedance at IZK | ZZK | | | 500 | Ω | @ IZK = 1.0 mA | 1 |
| Maximum reverse current | IR | | | 3 | µA | @ VR = 2 V (Note 2) | 1 |
| Typical temperature coefficient | TC | | -3.5 | | mV/°C | @ IZTC = 5 mA | 1 |
| Forward voltage | VF | | | 0.9 | V | @ IF = 10mA (Note 2) | 1 |
| Power dissipation | Pd | | | 200 | mW | Note 1: device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² | 1 |
| Operation junction temperature range | TJ | -40 | | 125 | ℃ | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction to ambient | RΘJA | | 625 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `HBZT52C4V7S7F`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `hbzt52c4v7s7f-etched.step` / `hbzt52c4v7s7f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbzt52c4v7s7f.step` / `hbzt52c4v7s7f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438412954906624) (3 pp, sha256 `c3d44c26337a2b79`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hbzt52c4v7s7f-datasheet.pdf)