component
HBZT52C18T1G
Public Made by Adomby adom
HXY MOSFET Zener Diodes, SOD-123. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
HBZT52C18T1G
HXY MOSFET · Zener Diodes · SOD-123
HBZT52C18T1G from HXY MOSFET, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener Voltage | VZ | 17.1 | 18 | 18.9 | V | IZ=5mA | 2 |
| Dynamic impedance | ZZ | 213 | Ω | IZ1=1mA | 2 | ||
| Dynamic impedance | ZZ | 42.7 | Ω | IZ2=5mA | 2 | ||
| Dynamic impedance | ZZ | 19 | Ω | IZ3=20mA | 2 | ||
| Reverse current | IR | 0.04 | uA | VR=13V | 2 | ||
| Reverse voltage | VR | 13 | V | test voltage for IR | 2 | ||
| Typical Temperature Coefficient | 12.4 | 16 | mV/℃ | IZ=5mA | 2 | ||
| Forward voltage | VF | 0.85 | V | IF=10mA, Tamb=25℃ | 1 | ||
| Total power dissipation | PD | 500 | mW | FR-5 board, Tamb=25℃ | 1 | ||
| Thermal resistance junction to ambient | RθJA | 556 | ℃/W | FR-5 Board | 1 | ||
| Thermal resistance junction to ambient | RθJA | 417 | ℃/W | AL substrate (alumina) | 1 | ||
| Maximum junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
HBZT52C18T1G - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
hbzt52c18t1g-etched.step/hbzt52c18t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbzt52c18t1g.step/hbzt52c18t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
981efa27b4b14081, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HBZT52C18T1G
**HXY MOSFET** · Zener Diodes · SOD-123
HBZT52C18T1G from HXY MOSFET, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener Voltage | VZ | 17.1 | 18 | 18.9 | V | IZ=5mA | 2 |
| Dynamic impedance | ZZ | | | 213 | Ω | IZ1=1mA | 2 |
| Dynamic impedance | ZZ | | | 42.7 | Ω | IZ2=5mA | 2 |
| Dynamic impedance | ZZ | | | 19 | Ω | IZ3=20mA | 2 |
| Reverse current | IR | | | 0.04 | uA | VR=13V | 2 |
| Reverse voltage | VR | | 13 | | V | test voltage for IR | 2 |
| Typical Temperature Coefficient | | 12.4 | | 16 | mV/℃ | IZ=5mA | 2 |
| Forward voltage | VF | | | 0.85 | V | IF=10mA, Tamb=25℃ | 1 |
| Total power dissipation | PD | | | 500 | mW | FR-5 board, Tamb=25℃ | 1 |
| Thermal resistance junction to ambient | RθJA | | | 556 | ℃/W | FR-5 Board | 1 |
| Thermal resistance junction to ambient | RθJA | | | 417 | ℃/W | AL substrate (alumina) | 1 |
| Maximum junction temperature | Tj | | | 150 | ℃ | | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `HBZT52C18T1G`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files: `hbzt52c18t1g-etched.step` / `hbzt52c18t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbzt52c18t1g.step` / `hbzt52c18t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hbzt52c18t1g-datasheet.pdf) (6 pp, sha256 `981efa27b4b14081`, retrieved 2026-10-23, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hbzt52c18t1g-datasheet.pdf)