component
HBZT52C18Q7F
Public Made by Adomby adom
HXY MOSFET Zener Diodes, SOD-123. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HBZT52C18Q7F
HXY MOSFET · Zener Diodes · SOD-123
HBZT52C18Q7F from HXY MOSFET, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 17.1 | 18 | 18.9 | V | @ IZT 5 mA (Note 2) | 1 |
| Maximum Zener impedance | 42.7 | Ω | @ IZT 5 mA (Note 3, f=1kHz) | 1 | |||
| Maximum Zener impedance | 213 | Ω | @ IZK 1.0 mA | 1 | |||
| Maximum reverse current | IR | 0.04 | µA | @ VR 13 V | 1 | ||
| Typical temperature coefficient | 12.4 | 16 | mV/°C | @ IZTC 5 mA | 1 | ||
| Forward voltage | VF | 0.9 | V | @ IF=10mA (Note 2) | 1 | ||
| Power dissipation | Pd | 500 | Note 1: device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm, pad areas 25mm | 1 | |||
| Operation junction temperature range | TJ | -40 | 125 | ℃ | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HBZT52C18Q7F - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
hbzt52c18q7f-etched.step/hbzt52c18q7f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbzt52c18q7f.step/hbzt52c18q7f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (3 pp, sha256
11221ca4d2987d22, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HBZT52C18Q7F
**HXY MOSFET** · Zener Diodes · SOD-123
HBZT52C18Q7F from HXY MOSFET, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 17.1 | 18 | 18.9 | V | @ IZT 5 mA (Note 2) | 1 |
| Maximum Zener impedance | | | | 42.7 | Ω | @ IZT 5 mA (Note 3, f=1kHz) | 1 |
| Maximum Zener impedance | | | | 213 | Ω | @ IZK 1.0 mA | 1 |
| Maximum reverse current | IR | | | 0.04 | µA | @ VR 13 V | 1 |
| Typical temperature coefficient | | 12.4 | | 16 | mV/°C | @ IZTC 5 mA | 1 |
| Forward voltage | VF | | | 0.9 | V | @ IF=10mA (Note 2) | 1 |
| Power dissipation | Pd | | | 500 | | Note 1: device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm, pad areas 25mm | 1 |
| Operation junction temperature range | TJ | -40 | | 125 | ℃ | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction to ambient | RΘJA | | | 625 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `HBZT52C18Q7F`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files: `hbzt52c18q7f-etched.step` / `hbzt52c18q7f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbzt52c18q7f.step` / `hbzt52c18q7f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438398077710336) (3 pp, sha256 `11221ca4d2987d22`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hbzt52c18q7f-datasheet.pdf)