# HBSD235CH6327

**HXY MOSFET** · MOSFETs · SOT-363(SC-70-6)

HBSD235CH6327 from HXY MOSFET, in a SOT-363(SC-70-6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 20V, ID 0.75A, RDS(ON) < 380mΩ at VGS=4.5V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±12V max, threshold 0.35 to 1.1V). |
| 3 | D2 | passive | Drain of the P-channel MOSFET (VDS -20V, ID -0.66A, RDS(ON) < 570mΩ at VGS=-4.5V). |
| 4 | S2 | passive | Source of the P-channel MOSFET (VDS -20V, ID -0.66A). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±12V max, threshold -0.35 to -1.1V). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20V, ID 0.75A, pulsed 1.8A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363(SC-70-6) |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS |  |  | 20 | V | TC=25℃ | 1 |
| Drain-Source Voltage (P-ch) | VDS | -20 |  |  | V | TC=25℃ | 1 |
| Gate-Source Voltage (N-ch) | VGS | -12 |  | 12 | V | ±12 V | 1 |
| Gate-Source Voltage (P-ch) | VGS | -12 |  | 12 | V | ±12 V | 1 |
| Continuous Drain Current (N-ch) | ID |  |  | 0.75 | A | TA=25℃, VGS @ 10V | 1 |
| Continuous Drain Current (P-ch) | ID | -0.66 |  |  | A | TA=25℃, VGS @ 10V | 1 |
| Pulsed Drain Current (N-ch) | IDM |  |  | 1.8 | A |  | 1 |
| Pulsed Drain Current (P-ch) | IDM | -1.2 |  |  | A |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 833 | ℃/W |  | 1 |
| N-ch Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID =250µA | 2 |
| N-ch Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS =20V,VGS = 0V | 2 |
| N-ch Gate-body leakage current | IGSS | -20 |  | 20 | uA | VGS =±10V, VDS = 0V | 2 |
| N-ch Gate threshold voltage | VGS(th) | 0.35 |  | 1.1 | V | VDS =VGS, ID =250µA | 2 |
| N-ch Drain-source on-resistance | RDS(on) |  |  | 380 | mΩ | VGS =4.5V, ID =0.65A | 2 |
| N-ch Drain-source on-resistance | RDS(on) |  |  | 450 | mΩ | VGS =2.5V, ID =0.55A | 2 |
| N-ch Drain-source on-resistance | RDS(on) |  |  | 800 | mΩ | VGS =1.8V, ID =0.45A | 2 |
| N-ch Diode forward voltage | VSD |  |  | 1.2 | V | IS=0.15A, VGS = 0V | 2 |
| N-ch Input Capacitance | Ciss |  | 79 | 120 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| N-ch Output Capacitance | Coss |  | 13 | 20 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| N-ch Reverse Transfer Capacitance | Crss |  | 9 | 15 | pF | VDS =16V,VGS =0V,f =1MHz | 2 |
| P-ch Drain-source breakdown voltage | V(BR)DSS |  |  | -20 | V | VGS = 0V, ID =-250µA | 2 |
| P-ch Zero gate voltage drain current | IDSS | -1 |  |  | µA | VDS =-20V,VGS = 0V | 2 |
| P-ch Gate-body leakage current | IGSS | -20 |  | 20 | uA | VGS =±10V, VDS = 0V | 2 |
| P-ch Gate threshold voltage | VGS(th) | -1.1 |  | -0.35 | V | VDS =VGS, ID =-250µA | 2 |
| P-ch Drain-source on-resistance | RDS(on) |  |  | 570 | mΩ | VGS =-4.5V, ID =-1A | 2 |
| P-ch Drain-source on-resistance | RDS(on) |  |  | 700 | mΩ | VGS =-2.5V, ID =-0.8A | 2 |
| P-ch Drain-source on-resistance | RDS(on) |  |  | 950 | mΩ | VGS =-1.8V, ID =-0.5A | 2 |
| P-ch Diode forward voltage | VSD | -1.2 |  |  | V | IS=-0.5A, VGS = 0V | 2 |
| P-ch Input Capacitance | Ciss |  | 113 | 170 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 |
| P-ch Output Capacitance | Coss |  | 15 | 25 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 |
| P-ch Reverse Transfer Capacitance | Crss |  | 9 | 15 | pF | VDS =-16V,VGS =0V,f =1MHz | 2 |
| N-ch Forward transconductance | gFS |  | 1.6 |  | S | VDS =10V, ID =0.8A | 2 |
| P-ch Forward transconductance | gFS |  | 1.2 |  | S | VDS =-10V, ID =-0.54A | 2 |
| N-ch Turn-on delay time | td(on) |  | 6.7 |  | ns | VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω | 2 |
| N-ch Turn-on rise time | tr |  | 4.8 |  | ns | VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω | 2 |
| N-ch Turn-off delay time | td(off) |  | 17.3 |  | ns | VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω | 2 |
| N-ch Turn-off fall time | tf |  | 7.4 |  | ns | VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω | 2 |
| P-ch Turn-on delay time | td(on) |  | 9 |  | ns | VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω | 2 |
| P-ch Turn-on rise time | tr |  | 5.8 |  | ns | VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω | 2 |
| P-ch Turn-off delay time | td(off) |  | 32.7 |  | ns | VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω | 2 |
| P-ch Turn-off fall time | tf |  | 20.3 |  | ns | VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω | 2 |

## CAD (KiCad official)

- Symbol: `HBSD235CH6327`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363(SC-70-6) (KiCad packages3D, STEP)
- 3D model files: `hbsd235ch6327-etched.step` / `hbsd235ch6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbsd235ch6327.step` / `hbsd235ch6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hbsd235ch6327-datasheet.pdf) (6 pp, sha256 `d73f588c6ba5c3da`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hbsd235ch6327-datasheet.pdf)