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HBSC065N06LS5

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HBSC065N06LS5

HXY MOSFET · MOSFETs · DFN5x6-8L

HBSC065N06LS5 from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, rated with VDS of 60 V and VGS limited to ±20 V per the absolute maximum ratings.
2 S passive Source terminal of the N-channel MOSFET, rated with VDS of 60 V and VGS limited to ±20 V per the absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET, rated with VDS of 60 V and VGS limited to ±20 V per the absolute maximum ratings.
4 G input Gate terminal of the N-channel MOSFET; VGS is limited to ±20 V per the absolute maximum ratings and the gate threshold is 2 to 4 V.
5 D passive Drain terminal of the N-channel MOSFET, rated at VDS of 60 V and continuous ID of 80 A at TC=25℃.
6 D passive Drain terminal of the N-channel MOSFET, rated at VDS of 60 V and continuous ID of 80 A at TC=25℃.
7 D passive Drain terminal of the N-channel MOSFET, rated at VDS of 60 V and continuous ID of 80 A at TC=25℃.
8 D passive Drain terminal of the N-channel MOSFET, rated at VDS of 60 V and continuous ID of 80 A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 5.3 7 mΩ VGS=10V, ID=30A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Maximum Continuous Drain to Source Diode Forward Current IS 80 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 320 A 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 80 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 52 A VGS @ 10V 1
Pulsed Drain Current IDM 320 A 1
Single Pulse Avalanche Energy EAS 169 mJ 1
Total Power Dissipation PD@TC=25℃ 108 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 1.4 ℃/W 1

CAD (KiCad official)

  • Symbol: HBSC065N06LS5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: hbsc065n06ls5-etched.step / hbsc065n06ls5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hbsc065n06ls5.step / hbsc065n06ls5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a638719bd21180dc, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF