# HBAV21WSE308

**HXY MOSFET** · Switching Diodes · SOD-323

HBAV21WSE308 from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM |  |  | 250 | V |  | 1 |
| Peak Repetitive Reverse Voltage | VRRM |  |  | 200 | V |  | 1 |
| Working Peak Reverse Voltage | VRWM |  |  | 200 | V |  | 1 |
| RMS Reverse Voltage | VR(RMS) |  |  | 141 | V |  | 1 |
| Average Rectified Output Current | IO |  |  | 200 | mA |  | 1 |
| Non-repetitive Peak Forward Surge Current | IFSM |  |  | 2 | A | t=8.3ms | 1 |
| Repetitive Peak Forward Surge Current | IFRM |  |  | 625 | mA |  | 1 |
| Power Dissipation | PD |  |  | 500 | mW |  | 1 |
| Thermal Resistance from Junction to Ambient | RΘJA |  |  | 250 | ℃/W |  | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Reverse current | IR |  |  | 0.1 | uA | VR=200V | 1 |
| Forward voltage | VF |  |  | 1 | V | IF=100mA | 1 |
| Forward voltage | VF |  |  | 1.25 | V | IF=200mA | 1 |
| Total capacitance | Ctot |  |  | 5 | pF | VR=0V,f=1MHz | 1 |
| Reverse recovery time | trr |  |  | 50 | ns | IF=IR=30mA, Irr=0.1*IR, RL=100Ω | 1 |

## CAD (KiCad official)

- Symbol: `HBAV21WSE308`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `hbav21wse308-etched.step` / `hbav21wse308-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbav21wse308.step` / `hbav21wse308.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438374132428800) (4 pp, sha256 `ae66ce0937044af3`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hbav21wse308-datasheet.pdf)