# HBAT54XV2T1G

**HXY MOSFET** · Schottky Diodes · SOD-523

HBAT54XV2T1G from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-523 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Reverse voltage | VR |  |  | 30 | V |  | 1 |
| Continuous forward current | IF |  |  | 200 | mA |  | 1 |
| Peak forward surge current | IFSM |  |  | 600 | mA |  | 1 |
| Total power dissipation | Ptot |  |  | 200 | mW |  | 1 |
| Total resistance junction to ambient | RθJA |  |  | 635 | ℃/W |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Reverse breakdown voltage | V(BR)R | 30 |  |  | V | IR=100μA | 1 |
| Reverse current | IR |  | 0.5 | 2 | μA | VR=25V | 1 |
| Diode capacitance | Cd |  | 7.6 | 10 | pF | VR=1V,f=1MHz | 1 |
| Reverse recovery time | trr |  |  | 5 | ns | IF=IR=10mA | 1 |
| Forward voltage | VF |  | 0.22 | 0.24 | V | IF=0.1mA | 1 |
| Forward voltage | VF |  | 0.29 | 0.32 | V | IF=1.0mA | 1 |
| Forward voltage | VF |  | 0.35 | 0.4 | V | IF=10mA | 1 |
| Forward voltage | VF |  | 0.41 | 0.5 | V | IF=30mA | 1 |
| Forward voltage | VF |  | 0.52 | 0.8 | V | IF=100mA | 1 |

## CAD (KiCad official)

- Symbol: `HBAT54XV2T1G`
- Footprint: `Diode_SMD:D_SOD-523`
- 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files: `hbat54xv2t1g-etched.step` / `hbat54xv2t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hbat54xv2t1g.step` / `hbat54xv2t1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008727541043200) (4 pp, sha256 `5b79b44a93a5972a`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hbat54xv2t1g-datasheet.pdf)