# HAZ5725-01F

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HAZ5725-01F from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (PPK) | PPK |  |  | 66 | W | Note 3: surge current waveform per Figure 3 | 2 |
| Peak pulse current (IPP) | IPP |  |  | 5.5 | A | Note 3: surge current waveform per Figure 3 | 2 |
| Clamping voltage at max IPP (VC) | VC |  |  | 12 | V | @ MAX IPP (Note 3) | 2 |
| Reverse working voltage (VRWM) | VRWM |  |  | 5 | V |  | 2 |
| Reverse leakage current (IR1) | IR1 |  |  | 0.5 | A | @ VRWM | 2 |
| Reverse leakage current (IR2) | IR2 |  |  | 0.3 | A | @ VR = 3.5 V | 2 |
| Breakdown voltage (VBR) | VBR | 5.6 |  |  | V | @ IT = 1.0 mA; pulse test at 25°C (Note 2) | 2 |
| Capacitance (C) | C |  | 10 |  | pF |  | 2 |
| Peak pulse power (PPP) | PPP |  |  | 66 | W | tp = 8/20 µs | 1 |
| Maximum lead temperature for soldering (TL) | TL |  |  | 260 | °C | during 10 s | 1 |
| Storage temperature range (Tstg) | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating temperature range (Top) | Top | -40 |  | 125 | °C |  | 1 |
| Maximum junction temperature (Tj) | Tj |  |  | 150 | °C |  | 1 |
| ESD IEC61000-4-2 air discharge |  | -25 |  | 25 | kV | IEC61000-4-2 (ESD) air discharge | 1 |
| ESD IEC61000-4-2 contact discharge |  | -20 |  | 20 | kV | IEC61000-4-2 (ESD) contact discharge | 1 |

## CAD (KiCad official)

- Symbol: `HAZ5725-01F`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `haz5725-01f-etched.step` / `haz5725-01f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `haz5725-01f.step` / `haz5725-01f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009239627677696) (4 pp, sha256 `2062db45aaba729a`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/haz5725-01f-datasheet.pdf)