component
HAT2215RJ-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHAT2215RJ-VB
VBsemi Elec · MOSFETs · SO-8
HAT2215RJ-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 80 V). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±30 V gate-source maximum. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 80 V). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±30 V gate-source maximum. |
| 5 | D2 | passive | Drain of MOSFET 2, 3.5 A continuous at TA=25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, 3.5 A continuous at TA=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, 3.5 A continuous at TA=25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, 3.5 A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3.5 | 4.2 | 5 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±30V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=80V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C, VDS=80V, VGS=0V | 2 | ||
| On state drain current | ID(ON) | 18 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 62 | mΩ | VGS=10V, ID=3.5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 113 | mΩ | TJ=125°C, VGS=10V, ID=3.5A | 2 | ||
| Diode Forward Voltage | VSD | 0.77 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Pulsed Body-diode Current | ISM | 18 | A | 2 | |||
| Input Capacitance | Ciss | 510 | 640 | 770 | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Output Capacitance | Coss | 28 | 40 | 52 | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 12 | 20 | 30 | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Gate resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg(10V) | 8 | 11 | 13 | nC | VGS=10V, VDS=40V, ID=3.5A | 2 |
| Total Gate Charge (4.5V) | Qg(4.5V) | 4 | 5.5 | 7 | nC | VGS=4.5V | 2 |
| Gate Source Charge | Qgs | 4 | 5 | 6 | nC | VGS=10V, VDS=40V, ID=3.5A | 2 |
| Gate Drain Charge | Qgd | 0.7 | 1.2 | 1.7 | nC | VGS=10V, VDS=40V, ID=3.5A | 2 |
| Body Diode Reverse Recovery Time | trr | 14 | 20 | ns | IF=3.5A, dI/dt=300A/µs | 2 | |
| Drain-Source Voltage | VDS | 80 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 3.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | 1 | |||
| Avalanche Current | IAR | 16 | A | 1 | |||
| Repetitive avalanche energy | EAR | 12.8 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient thermal resistance | RθJA | 48 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient thermal resistance | RθJA | 74 | 90 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead thermal resistance | RθJL | 32 | 40 | °C/W | Steady-State | 1 | |
| Forward Transconductance | gFS | 15 | S | VDS=5V, ID=3.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 7.2 | ns | VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 2.2 | ns | VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 17 | ns | VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 2 | ns | VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
HAT2215RJ-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
hat2215rj-vb-etched.step/hat2215rj-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hat2215rj-vb.step/hat2215rj-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
5c7edd71d51f1af2, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).