component
HAT2016R-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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hat2016r-vb: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
2 files changed
+547
README.md+48@@ -32,6 +32,54 @@ Same part, different packaging or reel option. - `HAT2016R-VB` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 6.8 | A | TC = 25 °C, package limited (note a); column inferred from scrambled text | 1 |+| Continuous Drain Current | ID | | | 5.6 | A | TC = 70 °C; column inferred from scrambled text | 1 |+| Continuous Drain Current | ID | | | 6.2 | A | TA = 25 °C, notes b, c (t ≤ 10 s) | 1 |+| Continuous Drain Current | ID | | | 5.2 | A | TA = 70 °C, note c | 1 |+| Pulsed Drain Current | IDM | | | 30 | A | | 1 |+| Continuous Source-Drain Diode Current | IS | | | 2.25 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | 1.48 | A | TA = 25 °C, notes b, c | 1 |+| Single Pulse Avalanche Current | IAS | | | 5 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 1.25 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 2.7 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.77 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.78 | W | TA = 25 °C, notes b, c | 1 |+| Maximum Power Dissipation | PD | | | 1.14 | W | TA = 70 °C, notes b, c | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 58 | 70 | °C/W | t ≤ 10 s, notes a, c, d | 1 |+| Maximum Junction-to-Ambient (Steady State) | RthJA | | | 110 | °C/W | Steady State, note d | 1 |+| Maximum Junction-to-Foot (Drain) | RthJF | | 38 | 45 | °C/W | Steady State | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V; column inferred | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C; column inferred | 2 |+| On-State Drain Current | ID(on) | 10 | | | A | VDS ≥ 5 V, VGS = 10 V; column inferred | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.026 | Ω | VGS = 4.5 V, ID = 4 A; column inferred | 2 |+| Gate Resistance | Rg | 0.8 | 4.3 | 8.6 | Ω | f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 3.7 | 5.6 | nC | VDS = 15 V, VGS = 4.5 V, ID = 5 A; column inferred | 2 |+| Turn-On Delay Time (VGEN = 4.5 V) | td(on) | | 12 | 24 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred | 2 |+| Rise Time (VGEN = 4.5 V) | tr | | 55 | 100 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred | 2 |+| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) | | 11 | 22 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred | 2 |+| Fall Time (VGEN = 4.5 V) | tf | | 8 | 16 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred | 2 |+| Turn-On Delay Time (VGEN = 10 V) | td(on) | | 4 | 8 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred | 2 |+| Rise Time (VGEN = 10 V) | tr | | 9 | 18 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred | 2 |+| Turn-Off Delay Time (VGEN = 10 V) | td(off) | | 10 | 20 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred | 2 |+| Fall Time (VGEN = 10 V) | tf | | 6 | 12 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred | 2 |+| Continuous Source-Drain Diode Current | IS | | | 2.25 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | 24 | A | | 2 |+| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 2 A, VGS = 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 11 | 20 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C; column inferred | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 4 | 8 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C; column inferred | 2 |+ ## CAD (KiCad official) - Symbol: `HAT2016R-VB`
page.json+499@@ -146,6 +146,505 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ee54425995fbd427",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.8,+ "conditions": "TC = 25 °C, package limited (note a); column inferred from scrambled text",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.6,+ "conditions": "TC = 70 °C; column inferred from scrambled text",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "TA = 25 °C, notes b, c (t ≤ 10 s)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.2,+ "conditions": "TA = 70 °C, note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.25,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.48,+ "conditions": "TA = 25 °C, notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.77,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.78,+ "conditions": "TA = 25 °C, notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.14,+ "conditions": "TA = 70 °C, notes b, c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 58,+ "max": 70,+ "conditions": "t ≤ 10 s, notes a, c, d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (Steady State)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Steady State, note d",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 38,+ "max": 45,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 30 V, VGS = 0 V; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 30 V, VGS = 0 V, TJ = 55 °C; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 10 V; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.026,+ "conditions": "VGS = 4.5 V, ID = 4 A; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.8,+ "typ": 4.3,+ "max": 8.6,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.7,+ "max": 5.6,+ "conditions": "VDS = 15 V, VGS = 4.5 V, ID = 5 A; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (VGEN = 4.5 V)",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 24,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (VGEN = 4.5 V)",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 55,+ "max": 100,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (VGEN = 4.5 V)",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 22,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (VGEN = 4.5 V)",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": 16,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time (VGEN = 10 V)",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 4,+ "max": 8,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time (VGEN = 10 V)",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time (VGEN = 10 V)",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time (VGEN = 10 V)",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": 12,+ "conditions": "VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.25,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 2 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 20,+ "conditions": "IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C; column inferred",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4,+ "max": 8,+ "conditions": "IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C; column inferred",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [