component
HAOZ8S502BDS-03
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 5d ago |
| haoz8s502bds-03-etched.glb | 14d ago |
| haoz8s502bds-03-etched.step | 14d ago |
| haoz8s502bds-03-hero.glb | 14d ago |
| haoz8s502bds-03-hero.overlay.json | 14d ago |
| haoz8s502bds-03.glb | 14d ago |
| haoz8s502bds-03.kicad_mod | 14d ago |
| haoz8s502bds-03.kicad_sym | 5d ago |
| haoz8s502bds-03.lbr | 5d ago |
| haoz8s502bds-03.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
HAOZ8S502BDS-03
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HAOZ8S502BDS-03 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, connected to the protected line (VRWM 5 V max, IR 0.05 µA max, VBR 6.5 V min at 1 mA). |
| 2 | 2 | passive | Other terminal of the bi-directional ESD protection diode, connected to the protected line or ground return (VRWM 5 V max, IR 0.05 µA max, VBR 6.5 V min at 1 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 3.3 | V | 2 | |||
| Breakdown voltage | VBR | 5 | V | @ IT = 1.0 mA, Note 1 | 2 | ||
| Reverse leakage current | IR | 0.05 | µA | @ VRWM | 2 | ||
| Clamping voltage at 1 A | VC | 7 | V | @ IPP = 1 A, Note 2 | 2 | ||
| Clamping voltage at max IPP | VC | 11 | V | @ MAX IPP, Note 2 | 2 | ||
| Peak pulse current | IPP | 9 | A | Note 2 | 2 | ||
| Peak pulse power | PPK | 100 | W | Note 2 | 2 | ||
| Peak pulse power | PPP | 100 | W | tp = 8/20 µs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD air discharge | -30 | 30 | KV | IEC61000-4-2 | 1 | ||
| ESD contact discharge | -30 | 30 | KV | IEC61000-4-2 | 1 | ||
| EFT | 40 | A | IEC61000-4-4 | 1 | |||
| Capacitance | C | 15 | pF | 2 | |||
| Dynamic resistance | RDYN | 0.2 | Ω | @ tp = 100 ns (TLP) | 2 |
CAD (KiCad official)
- Symbol:
HAOZ8S502BDS-03 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
haoz8s502bds-03-etched.step/haoz8s502bds-03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);haoz8s502bds-03.step/haoz8s502bds-03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
a2f6ff4fe96a75e2, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).