component
HAOZ8905CI
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHAOZ8905CI
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · SOT-23-6L
HAOZ8905CI from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | ESD-protected channel I/O pin (shares the channel with pin 6), with 0.4pF max capacitance to GND and VRWM of 5V. |
| 2 | GND | power_in | Negative rail of the diode array, assigned as GND and connected to system ground, to which positive ESD current is steered through an ESD diode and the zener diode. |
| 3 | I/O2 | passive | ESD-protected channel I/O pin (shares the channel with pin 4), with 0.4pF max capacitance to GND and VRWM of 5V. |
| 4 | I/O3 | passive | ESD-protected channel I/O pin (shares the channel with pin 3), with 0.4pF max capacitance to GND and VRWM of 5V. |
| 5 | VP | passive | Positive rail of the diode array, with the integrated zener diode between it and GND clamping positive ESD voltage to the zener voltage. |
| 6 | I/O4 | passive | ESD-protected channel I/O pin (shares the channel with pin 1), with 0.4pF max capacitance to GND and VRWM of 5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-6L |
| Category | Circuit Protection |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | Any I/O pin to GND | 2 | ||
| Reverse Breakdown Voltage | VBR | 6 | V | It=1mA; Any I/O pin to GND | 2 | ||
| Reverse Leakage Current | IR | 1 | μA | VRWM=5V, T=25°C; Any I/O pin to GND | 2 | ||
| Positive Clamping Voltage | VC1 | 8.5 | 12 | V | IPP=4A, tP=8/20μs; Positive pulse; Any I/O pin to GND | 2 | |
| Junction Capacitance Between I/O pins | CJ1 | 0.6 | 0.8 | pF | VR=0V, f=1MHz; Between I/O pins | 2 | |
| Junction Capacitance I/O to GND | CJ2 | 0.3 | 0.4 | pF | VR=0V, f=1MHz; Any I/O pin to GND | 2 | |
| Negative Clamping Voltage | VC2 | 1.8 | V | IPP=4A, tP=8/20μs; Negative pulse; Any I/O pin to GND | 2 | ||
| Peak Pulse Power | PPP | 55 | W | 8/20μs | 1 | ||
| Peak Pulse Current | IPP | 4 | A | 8/20μs | 1 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD2 | -15 | 15 | kV | Contact | 1 | |
| Operating Temperature Range | Topr | -55 | 125 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
HAOZ8905CI - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
haoz8905ci-etched.step/haoz8905ci-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);haoz8905ci.step/haoz8905ci.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
788dcfbefaf2efe0, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).