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HAO3435

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HAO3435

HXY MOSFET · MOSFETs · SOT-23

HAO3435 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel switch, with absolute maximum gate-source voltage of ±12 V and threshold VGS(th) of -0.4 V min to -1 V max at ID=-250 µA.
2 S passive Source; connects to the positive supply side in a load switch, with continuous drain current rated -3 A and body-diode forward current IS of -3 A max.
3 D passive Drain; single lead on the opposite side of the package, rated for drain-source voltage of -20 V, continuous current -3 A and pulsed current -10 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID -3 A TA=25℃ 1
Drain Current-Pulsed IDM -10 A Note 1 1
Maximum Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS -20 -24 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 60 80 mΩ VGS=-4.5V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 85 103 mΩ VGS=-2.5V, ID=-2A 2
Forward Transconductance gFS 5 S VDS=-5V,ID=-2A 2
Total Gate Charge Qg 3.3 12 nC VDS=-10V,ID=-3A, VGS=-2.5V 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=1.3A 2
Diode Forward Current IS -3 A 2
Input Capacitance Clss 405 PF VDS=-10V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 75 PF VDS=-10V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 55 PF VDS=-10V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 11 nS VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω 2
Turn-on Rise Time tr 35 nS VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω 2
Turn-Off Delay Time td(off) 30 nS VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω 2
Turn-Off Fall Time tf 10 nS VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω 2
Gate-Source Charge Qgs 0.7 nC VDS=-10V,ID=-3A, VGS=-2.5V 2
Gate-Drain Charge Qgd 1.3 nC VDS=-10V,ID=-3A, VGS=-2.5V 2

CAD (KiCad official)

  • Symbol: HAO3435
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hao3435-etched.step / hao3435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hao3435.step / hao3435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 b2ef984f237709a8, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF