component
HAF1004-90STL-E-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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haf1004-90stl-e-vb: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+495
README.md+44@@ -28,6 +28,50 @@ Same part, different packaging or reel option. - `HAF1004-90STL-E-VB` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (TJ = 175 °C), TC = 25 °C | ID | -30 | | | A | TJ = 175 °C, TC = 25 °C | 1 |+| Continuous Drain Current (TJ = 175 °C), TC = 100 °C | ID | -25 | | | A | TJ = 175 °C, TC = 100 °C | 1 |+| Continuing Source Current (Diode Conduction) | IS | -20 | | | A | | 1 |+| Avalanche Current | IAS | -20 | | | A | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 7.2 | mJ | L = 0.1 mH | 1 |+| Maximum Power Dissipation, TC = 25 °C | PD | | | 34 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation, TA = 25 °C | PD | | | 4 | W | TA = 25 °C, surface mounted on 1" x 1" FR-4 board | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Junction-to-Ambient, t ≤ 10 sec | RthJA | | 20 | 25 | °C/W | t ≤ 10 sec | 1 |+| Junction-to-Ambient, steady state | RthJA | | 62 | 75 | °C/W | Steady state | 1 |+| Junction-to-Case | RthJC | | 5 | 6 | °C/W | | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | -1 | | | µA | VDS = -60 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current, TJ = 125 °C | IDSS | -50 | | | µA | VDS = -60 V, VGS = 0 V, TJ = 125 °C | 2 |+| Zero Gate Voltage Drain Current, TJ = 175 °C | IDSS | -150 | | | µA | VDS = -60 V, VGS = 0 V, TJ = 175 °C | 2 |+| Drain-Source On-State Resistance | rDS(on) | | | 0.061 | Ω | VGS = -10 V, ID = -5 A | 2 |+| Drain-Source On-State Resistance, TJ = 125 °C | rDS(on) | | | 0.1 | Ω | VGS = -10 V, ID = -5 A, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance, TJ = 175 °C | rDS(on) | | | 0.15 | Ω | VGS = -10 V, ID = -5 A, TJ = 175 °C | 2 |+| Drain-Source On-State Resistance | rDS(on) | | | 0.072 | Ω | VGS = -4.5 V, ID = -2 A | 2 |+| Forward Voltage | VSD | -1.3 | -0.9 | | V | IF = -2 A, VGS = 0 V | 2 |+| Forward Transconductance | gfs | | 8 | | S | VDS = -15 V, ID = -5 A | 2 |+| Input Capacitance | Ciss | | 1000 | | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 120 | | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 100 | | pF | | 2 |+| Total Gate Charge | Qg | | 10 | | nC | VDS = -30 V, VGS = -10 V, ID = -8.4 A | 2 |+| Gate-Source Charge | Qgs | | 2.1 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 3.2 | | nC | | 2 |+| Gate Resistance | Rg | | 8 | | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | 6 | | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 |+| Rise Time | tr | | 15 | | ns | | 2 |+| Turn-Off Delay Time | td(off) | | 16 | | ns | | 2 |+| Fall Time | tf | | 8 | | ns | | 2 |+| Reverse Recovery Time | trr | | 50 | | ns | IF = -8 A, di/dt = 100 A/µs | 2 |+| Reverse Recovery Charge | Qrr | | 80 | | nC | | 2 |+ ## CAD (KiCad official) - Symbol: `HAF1004-90STL-E-VB`
page.json+451@@ -122,6 +122,457 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "dd890faa750142da",+ "rows": [+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C), TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "TJ = 175 °C, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 175 °C), TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -25,+ "typ": null,+ "max": null,+ "conditions": "TJ = 175 °C, TC = 100 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuing Source Current (Diode Conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 7.2,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation, TC = 25 °C",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 34,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation, TA = 25 °C",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TA = 25 °C, surface mounted on 1\" x 1\" FR-4 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient, t ≤ 10 sec",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 20,+ "max": 25,+ "conditions": "t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient, steady state",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 62,+ "max": 75,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 5,+ "max": 6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -2,+ "max": -3,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "VDS = -60 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 125 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -50,+ "typ": null,+ "max": null,+ "conditions": "VDS = -60 V, VGS = 0 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 175 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -150,+ "typ": null,+ "max": null,+ "conditions": "VDS = -60 V, VGS = 0 V, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.061,+ "conditions": "VGS = -10 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance, TJ = 125 °C",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VGS = -10 V, ID = -5 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance, TJ = 175 °C",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "VGS = -10 V, ID = -5 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.072,+ "conditions": "VGS = -4.5 V, ID = -2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": -1.3,+ "typ": -0.9,+ "max": null,+ "conditions": "IF = -2 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDS = -15 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1000,+ "max": null,+ "conditions": "VDS = -25 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 120,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDS = -30 V, VGS = -10 V, ID = -8.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.1,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.2,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "IF = -8 A, di/dt = 100 A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 80,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [