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HAF1004-90STL-E-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,13 +32,13 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated gate terminal that controls conduction of the P-channel MOSFET channel. Maximum VGS = \u00b120 V; typical VGS(th) = -2.0 V (min -1.0 V, max -3.0 V)."+ "description": "Gate. Insulated gate terminal that controls conduction of the P-channel MOSFET channel. Maximum VGS = ±20 V; typical VGS(th) = -2.0 V (min -1.0 V, max -3.0 V)." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Drain of the P-channel MOSFET; also connected to the exposed tab of the TO-252 package. Rated VDS = -60 V, ID = -30 A continuous at TC = 25 \u00b0C."+ "description": "Drain. Drain of the P-channel MOSFET; also connected to the exposed tab of the TO-252 package. Rated VDS = -60 V, ID = -30 A continuous at TC = 25 °C." }, { "number": "3",@@ -50,7 +50,7 @@ "number": "4", "name": "D (Tab)", "type": "passive",- "description": "Exposed thermal tab, electrically connected to the Drain. Used for heat dissipation to the PCB copper pour; PD = 34 W at TC = 25 \u00b0C, RthJC = 5 \u00b0C/W typical."+ "description": "Exposed thermal tab, electrically connected to the Drain. Used for heat dissipation to the PCB copper pour; PD = 34 W at TC = 25 °C, RthJC = 5 °C/W typical." } ], "provenance": {@@ -120,5 +120,8 @@ "docs/haf1004-90stl-e-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }