component
H8550D
Public Made by Adomby adom
KEXIN Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| h8550d-etched.glb | 17d ago |
| h8550d-etched.step | 17d ago |
| h8550d-hero.glb | 17d ago |
| h8550d-hero.overlay.json | 17d ago |
| h8550d.glb | 17d ago |
| h8550d.kicad_mod | 17d ago |
| h8550d.kicad_sym | 17d ago |
| h8550d.lbr | 17d ago |
| h8550d.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
H8550D
KEXIN · Bipolar (BJT) · SOT-89
H8550D from KEXIN, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; the base-emitter saturation voltage is -1.2 V max at IC=-800mA, IB=-80mA, and the emitter-base voltage VEBO is -5 V. |
| 2 | Collector | passive | Collector terminal of the PNP transistor, rated for a collector current IC of -1.5 A and a collector power dissipation PC of 0.5 W, with collector-emitter voltage VCEO of -25 V. |
| 3 | Emitter | passive | Emitter terminal of the PNP transistor, with collector-base voltage VCBO of -40 V and emitter-base breakdown voltage VEBO of -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (hFE) classification range | hFE | 85 | 400 | VCE= -1V, IC= -100mA | 1 | ||
| DC current gain | hFE | 40 | VCE= -1V, IC = -800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB= -80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-800mA, IB=-80mA | 1 | ||
| Base-emitter on voltage | VBE(on) | -1 | V | Ic=-1V,VCE=-10mA | 1 | ||
| Base-emitter positive favor voltage | VBEF | -1.55 | V | IB=-1A | 1 | ||
| Collector-base breakdown voltage | VCBO | -40 | V | IC= -100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | -25 | V | IC = -0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE= -100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB= -40 V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB= -5V, IC=0 | 1 | ||
| Output capacitance | Cob | 20 | pF | VCB=-10V,IE =0,f=1MHz | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= -10V, IC=-50mA | 1 | ||
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Collector-emitter voltage | VCEO | -25 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -1.5 | A | 1 | |||
| Collector power dissipation | PC | 0.5 | W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
H8550D - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
h8550d-etched.step/h8550d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h8550d.step/h8550d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (2 pp, sha256
245a4842c95b55ea, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).