# H7N0603DSTL-E-VB

**VBsemi Elec** · MOSFETs · TO-252

H7N0603DSTL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a gate threshold voltage of 1 V min, 2 V typ and 3 V max at 250 µA. |
| 2 | D | passive | Drain, connected to the tab; drain-source breakdown is 60 V min, and continuous drain current is 58 A at TC = 25 °C with a pulsed rating of 100 A. |
| 3 | S | passive | Source; continuous source (diode conduction) current is rated at 50 A, with a pulsed source current of 60 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `H7N0603DSTL-E-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `h7n0603dstl-e-vb-etched.step` / `h7n0603dstl-e-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h7n0603dstl-e-vb.step` / `h7n0603dstl-e-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/h7n0603dstl-e-vb-datasheet.pdf) (7 pp, sha256 `ae0a88b743d44ef7`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/h7n0603dstl-e-vb-datasheet.pdf)