component
H5VU10U
Public Made by Adomby adom
hongjiacheng ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownH5VU10U
hongjiacheng · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
H5VU10U from hongjiacheng, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the uni-directional 5V ultra-small-capacitance ESD diode, with reverse working voltage 5 V max and junction capacitance 0.8 pF max across the pair. |
| 2 | 2 | passive | The other terminal of the uni-directional 5V ultra-small-capacitance ESD diode, with reverse working voltage 5 V max and junction capacitance 0.8 pF max across the pair. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 55 | W | tp = 8/20 µs | 1 | ||
| Rated Peak Pulse Current | IPP | 5 | A | tp = 8/20 µs | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 125 | ℃ | 1 | ||
| Storage Temperature Range (printed as Operating JunctionTemperature Range) | TSTG | -55 | 150 | ℃ | 1 | ||
| Electrostatic Discharge Voltage (Air) | VESD | -25 | 25 | KV | ESD per IEC 61000-4-2 (Air) | 1 | |
| Electrostatic Discharge Voltage (Contact) | VESD | -20 | 20 | KV | ESD per IEC 61000-4-2 (Contact) | 1 | |
| Peak Reverse Working Voltage | VRWM | 5 | V | Ta=25℃ | 2 | ||
| Breakdown Voltage | VBR | 5.6 | 9 | V | IR=1.0mA, Ta=25℃ | 2 | |
| Reverse Leakage Current | IR | 0.2 | μA | VR=5V, Ta=25℃ | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP=1.0A, tp=8/20μs | 2 | ||
| Clamping Voltage | VC | 14 | 16 | V | IPP=5.0A, tp=8/20μs | 2 | |
| Junction Capacitance | CJ | 0.8 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
H5VU10U - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
h5vu10u-etched.step/h5vu10u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h5vu10u.step/h5vu10u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
3e2359240ee76b58, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).