component
H5VND5B
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hongjiacheng ESD And Surge Protection (TVS/ESD), SOD-523. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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H5VND5B
hongjiacheng · ESD And Surge Protection (TVS/ESD) · SOD-523
H5VND5B from hongjiacheng, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | Bi-directional ESD protection terminal on the cathode-band side, protecting against IEC 61000-4-2 ±30 kV air/contact discharge with 5 V max reverse working voltage. |
| 2 | I/O2 | passive | Bi-directional ESD protection terminal opposite the cathode band, interchangeable with pin 1, rated for 8 A (8/20 µs) peak pulse current and 20 pF max junction capacitance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD Electrostatic Discharge Voltage, per IEC 61000-4-2 (Air) | VESD | -30 | 30 | kV | ESD per IEC 61000-4-2 (Air) | 1 | |
| ESD Electrostatic Discharge Voltage, per IEC 61000-4-2 (Contact) | VESD | -30 | 30 | kV | ESD per IEC 61000-4-2 (Contact) | 1 | |
| Peak Pulse Power | PPP | 120 | W | tp = 8/20 µs | 1 | ||
| Rated Peak Pulse Current | IPP | 8 | A | tp = 8/20 µs | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 125 | ℃ | 1 | ||
| Storage temperature range (printed as Operating JunctionTemperature Range) | TSTG | -55 | 150 | ℃ | 1 | ||
| Peak Reverse Working Voltage | VRWM | 5 | V | Ta=25℃ | 2 | ||
| Breakdown Voltage | VBR | 5.6 | 8 | V | IR=1mA,Ta=25℃ | 2 | |
| Reverse Leakage Current | IR | 0.2 | μA | VR=5V,Ta=25℃ | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP=1.0A, tp=8/20μs | 2 | ||
| Clamping Voltage | VC | 15 | V | IPP=8A,tp=8/20μs | 2 | ||
| Junction Capacitance | CJ | 20 | pF | VR=0V,f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
H5VND5B - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
h5vnd5b-etched.step/h5vnd5b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h5vnd5b.step/h5vnd5b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
c1b55640172a468e, retrieved 2026-10-20, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# H5VND5B
**hongjiacheng** · ESD And Surge Protection (TVS/ESD) · SOD-523
H5VND5B from hongjiacheng, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | Bi-directional ESD protection terminal on the cathode-band side, protecting against IEC 61000-4-2 ±30 kV air/contact discharge with 5 V max reverse working voltage. |
| 2 | I/O2 | passive | Bi-directional ESD protection terminal opposite the cathode band, interchangeable with pin 1, rated for 8 A (8/20 µs) peak pulse current and 20 pF max junction capacitance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOD-523 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD Electrostatic Discharge Voltage, per IEC 61000-4-2 (Air) | VESD | -30 | | 30 | kV | ESD per IEC 61000-4-2 (Air) | 1 |
| ESD Electrostatic Discharge Voltage, per IEC 61000-4-2 (Contact) | VESD | -30 | | 30 | kV | ESD per IEC 61000-4-2 (Contact) | 1 |
| Peak Pulse Power | PPP | | | 120 | W | tp = 8/20 µs | 1 |
| Rated Peak Pulse Current | IPP | | | 8 | A | tp = 8/20 µs | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 125 | ℃ | | 1 |
| Storage temperature range (printed as Operating JunctionTemperature Range) | TSTG | -55 | | 150 | ℃ | | 1 |
| Peak Reverse Working Voltage | VRWM | | | 5 | V | Ta=25℃ | 2 |
| Breakdown Voltage | VBR | 5.6 | | 8 | V | IR=1mA,Ta=25℃ | 2 |
| Reverse Leakage Current | IR | | | 0.2 | μA | VR=5V,Ta=25℃ | 2 |
| Clamping Voltage | VC | | | 10 | V | IPP=1.0A, tp=8/20μs | 2 |
| Clamping Voltage | VC | | | 15 | V | IPP=8A,tp=8/20μs | 2 |
| Junction Capacitance | CJ | | | 20 | pF | VR=0V,f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `H5VND5B`
- Footprint: `Diode_SMD:D_SOD-523`
- 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files: `h5vnd5b-etched.step` / `h5vnd5b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h5vnd5b.step` / `h5vnd5b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [hongjiacheng datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756315206488338432) (3 pp, sha256 `c1b55640172a468e`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/h5vnd5b-datasheet.pdf)