component
H5VL10BH
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hongjiacheng ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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H5VL10BH
hongjiacheng · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
H5VL10BH from hongjiacheng, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode, rated for a 5.0 V max reverse working voltage (VRWM) with 5.5 pF typical junction capacitance at 0 V, 1 MHz. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode, rated for a 5.0 V max reverse working voltage (VRWM) with 5.5 pF typical junction capacitance at 0 V, 1 MHz. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Electrostatic Discharge Voltage, ESD per IEC 61000-4-2 (Air) | VESD | -30 | 30 | KV | ESD per IEC 61000-4-2( Air ) | 1 | |
| Electrostatic Discharge Voltage, ESD per IEC 61000-4-2 (Contact) | VESD | -30 | 30 | KV | ESD per IEC 61000-4-2( Contact） | 1 | |
| Peak Pulse Power | PPP | 36 | W | tp = 8/20 µs | 1 | ||
| Rated Peak Pulse Current | IPP | 3.5 | A | tp = 8/20 µs | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (storage, as printed) | TSTG | -55 | 150 | ℃ | 1 | ||
| Peak Reverse Working Voltage | VRWM | 5 | V | Ta=25℃ | 2 | ||
| Breakdown Voltage | VBR | 6 | 8 | V | IT=1.0mA,Ta=25℃ | 2 | |
| Reverse Leakage Current | IR | 0.2 | μA | VRWM=5.0V,Ta=25℃ | 2 | ||
| Clamping Voltage | VC | 8.5 | V | IPP=1.0A,tp=8/20μs | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP=3.5A,tp=8/20μs | 2 | ||
| Junction Capacitance | CJ | 5.5 | 7 | pF | VRMW=0V,f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
H5VL10BH - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
h5vl10bh-etched.step/h5vl10bh-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h5vl10bh.step/h5vl10bh.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
829a75a2a500bb54, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# H5VL10BH
**hongjiacheng** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
H5VL10BH from hongjiacheng, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode, rated for a 5.0 V max reverse working voltage (VRWM) with 5.5 pF typical junction capacitance at 0 V, 1 MHz. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode, rated for a 5.0 V max reverse working voltage (VRWM) with 5.5 pF typical junction capacitance at 0 V, 1 MHz. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Electrostatic Discharge Voltage, ESD per IEC 61000-4-2 (Air) | VESD | -30 | | 30 | KV | ESD per IEC 61000-4-2( Air ) | 1 |
| Electrostatic Discharge Voltage, ESD per IEC 61000-4-2 (Contact) | VESD | -30 | | 30 | KV | ESD per IEC 61000-4-2( Contact） | 1 |
| Peak Pulse Power | PPP | | | 36 | W | tp = 8/20 µs | 1 |
| Rated Peak Pulse Current | IPP | | | 3.5 | A | tp = 8/20 µs | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range (storage, as printed) | TSTG | -55 | | 150 | ℃ | | 1 |
| Peak Reverse Working Voltage | VRWM | | | 5 | V | Ta=25℃ | 2 |
| Breakdown Voltage | VBR | 6 | | 8 | V | IT=1.0mA,Ta=25℃ | 2 |
| Reverse Leakage Current | IR | | | 0.2 | μA | VRWM=5.0V,Ta=25℃ | 2 |
| Clamping Voltage | VC | | | 8.5 | V | IPP=1.0A,tp=8/20μs | 2 |
| Clamping Voltage | VC | | | 10 | V | IPP=3.5A,tp=8/20μs | 2 |
| Junction Capacitance | CJ | | 5.5 | 7 | pF | VRMW=0V,f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `H5VL10BH`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `h5vl10bh-etched.step` / `h5vl10bh-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h5vl10bh.step` / `h5vl10bh.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [hongjiacheng datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604441948107526144) (3 pp, sha256 `829a75a2a500bb54`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/h5vl10bh-datasheet.pdf)