component
H2SK3078A
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownH2SK3078A
HXY MOSFET · MOSFETs · SOT-89
H2SK3078A from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage VGS max 5 V, threshold VGS(th) 0.6 to 1.2 V at VDS=5V, ID=0.5mA, and typical RF operating bias 1.3 V. |
| 2 | S | passive | Source; common terminal of the RF power MOSFET, with VDSS max 12 V to drain and ID max 0.5 A. |
| 3 | D | passive | Drain; VDSS max 12 V, ID max 0.5 A, operating VDS 5 V typ (8.4 V max) at f=450MHz. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 12 | V | Ta=25℃ | 1 | ||
| Drain current | ID | 0.5 | A | Ta=25℃ | 1 | ||
| Gate-source voltage | VGS | 5 | V | Ta=25℃ | 1 | ||
| Power dissipation | Ptot | 3 | W | Ta=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 | |
| Turn-on (gate threshold) voltage | VGS(th) | 0.6 | 0.8 | 1.2 | V | VDS= 5V, ID=0.5mA | 1 |
| Drain-source leakage current | IDSS | 10 | μA | VDS= 10V ,VGS=0V | 1 | ||
| Gate-source leakage current | IGSS | 5 | μA | VGS=5V | 1 | ||
| Operating voltage | VDS | 5 | 8.4 | V | f=450MHz, IDS=100mA, Pi=15dBmW | 1 | |
| Gate operating voltage | VGS(TYP) | 0.8 | 1.3 | 1.5 | V | VDS= 5V, f=500MHz IDS=100mA, Pi=15dBmW | 1 |
| Output power | PO | 27.5 | 28.5 | dBmW | VDS=5V,f=450MHz, IDS=100mA, VGS(TYP)=1.30V, Pi=15dBmW | 1 | |
| Drain efficiency | ηD | 45 | 55 | % | 1 | ||
| Output power | PO | 0.56 | 0.71 | W | 1 | ||
| Power gain | GP | 12.5 | 13.5 | dB | 1 |
CAD (KiCad official)
- Symbol:
H2SK3078A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
h2sk3078a-etched.step/h2sk3078a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h2sk3078a.step/h2sk3078a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
0c2c2e15db444e87, retrieved 2026-11-05, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).