component
H2SD1898T100R
Public Made by Adomby adom
HXY MOSFET Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownH2SD1898T100R
HXY MOSFET · Bipolar Transistors - BJT · SOT-89
H2SD1898T100R from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives an emitter-base voltage rating VEBO of 5 V and an emitter-base breakdown V(BR)EBO of 5 V minimum at IE = 50 µA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet limits are VCBO 100 V, VCEO 80 V, continuous collector current IC 1 A, and collector power dissipation PC 0.5 W. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet gives an emitter-base voltage rating VEBO of 5 V and the collector-emitter breakdown voltage V(BR)CEO of 80 V minimum at IC = 1 mA, IB = 0. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | IC=50μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC= 1mA, IB=0; pulse test | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE= 50μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 1 | μA | VCB=80V, I E=0 | 1 | ||
| Emitter cut-off current | IEBO | 1 | μA | VEB=4V, IC=0 | 1 | ||
| DC current gain (rank 180-390, T100R suffix) | hFE | 180 | 390 | VCE=5V, IC=200mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=500m A, IB=20mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V, IC=200mA | 1 | ||
| Collector output capacitance | Cob | 20 | pF | VCB=10V,IE=0,f=1MHz | 1 | ||
| Collector-base voltage | VCBO | 100 | V | 1 | |||
| Collector-emitter voltage | VCEO | 80 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 1 | A | 1 | |||
| Collector power dissipation | PC | 0.5 | W | Ta=25 (maximum ratings table header) | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
H2SD1898T100R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
h2sd1898t100r-etched.step/h2sd1898t100r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h2sd1898t100r.step/h2sd1898t100r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
62af6505b1d315b0, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).