component
H2SC2412KT146R
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| h2sc2412kt146r-etched.glb | 12d ago |
| h2sc2412kt146r-etched.step | 12d ago |
| h2sc2412kt146r-hero.glb | 12d ago |
| h2sc2412kt146r-hero.overlay.json | 12d ago |
| h2sc2412kt146r.glb | 12d ago |
| h2sc2412kt146r.kicad_mod | 12d ago |
| h2sc2412kt146r.kicad_sym | 12d ago |
| h2sc2412kt146r.lbr | 12d ago |
| h2sc2412kt146r.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
H2SC2412KT146R
HXY MOSFET · Bipolar (BJT) · SOT-23
H2SC2412KT146R from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet rates VEBO at 7 V and gives hFE of 120 to 560 at VCE=6V, IC=1mA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet rates emitter-base voltage at 7 V. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet rates VCBO at 60 V, VCEO at 50 V and IC at 150 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=50μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE=50μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=60V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=7V,IC=0 | 1 | ||
| DC current transfer ratio | hFE | 120 | 560 | VCE=6V,IC=1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=50mA,IB=5mA | 1 | ||
| Transition frequency | fT | 180 | MHz | VCE=12V,IC=2mA, f=100MHz | 1 | ||
| Output capacitance | Cob | 3.5 | pF | VCB=12V,IE=0, f=1MHz | 1 | ||
| Collector-base voltage | VCBO | 60 | V | 1 | |||
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Emitter-base voltage | VEBO | 7 | V | 1 | |||
| Collector current | IC | 150 | mA | 1 | |||
| Collector power dissipation | PC | 150 | mW | 1 | |||
| Operation junction and storage temperature range | TJ ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
H2SC2412KT146R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
h2sc2412kt146r-etched.step/h2sc2412kt146r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h2sc2412kt146r.step/h2sc2412kt146r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
f84480416a2b3e3e, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).