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H2N7002KU

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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H2N7002KU

HXY MOSFET · MOSFETs · SOT-323

H2N7002KU from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, threshold 1 V min to 2.5 V max at ID=250 µA, and ESD rating is HBM ≥2000 V.
2 S passive Source; connects to the body diode anode, with continuous drain current limit of 0.115 A.
3 D passive Drain; drain-source voltage rated at 60 V with RDS(on) below 3 Ω at VGS=10 V and continuous drain current of 0.115 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 0.115 A 1
Maximum Power Dissipation PD 0.2 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient θJA 625 ℃/W Note 2 1
ESD Rating 2000 V HBM 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0 V, ID=250 µA 2
Gate-Threshold Voltage V(GS)th 1 1.6 2.5 V VDS=VGS, ID=250 µA 2
Gate-body Leakage IGSS -80 80 nA VDS=0 V, VGS=±20 V 2
Zero Gate Voltage Drain Current IDSS 80 nA VDS=60 V, VGS=0 V 2
On-state Drain Current ID(on) 500 mA VGS=10 V, VDS=7 V 2
Drain-Source On-Resistance RDS(on) 1.3 3 Ω VGS=10 V, ID=115mA 2
Drain-Source On-Resistance RDS(on) 2 5 Ω VGS=4.5V, ID=50mA 2
Forward Transconductance gfs 80 500 ms VDS=10 V, ID=200mA 2
Drain-source on-voltage VDS(on) 0.5 3.75 V VGS=10V, ID=500mA 2
Drain-source on-voltage VDS(on) 0.05 0.375 V VGS=5V, ID=50mA 2
Diode Forward Voltage VSD 0.55 1.2 V IS=115mA, VGS=0 V 2
Input Capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 25 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0V, f=1MHz 2
Turn-on Time td(on) 20 ns VDD=25 V, RL=50 Ω, ID=500mA, VGEN=10 V, RG=25 Ω 2
Turn-off Time td(off) 40 ns VDD=25 V, RL=50 Ω, ID=500mA, VGEN=10 V, RG=25 Ω 2

CAD (KiCad official)

  • Symbol: H2N7002KU
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: h2n7002ku-etched.step / h2n7002ku-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); h2n7002ku.step / h2n7002ku.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 fe78973ca07bd142, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF