component
H1SMA48CAT3
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SMA(DO-214AC). Diode: pin 1 is the cathode (the banded end) by the KiCad diode-footprint convention, KiCad symbol/footprint/3D.
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H1SMA48CAT3
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SMA(DO-214AC)
H1SMA48CAT3 from HXY MOSFET, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SMA(DO-214AC) |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power dissipation | PPPM | 5.2 | W | 10/1000us waveform (Note1, Note2, Fig.1) | 1 | ||
| Steady state power dissipation | PM(AV) | 3.3 | W | TA=50C (Fig.5) | 1 | ||
| Peak forward surge current | IFSM | 60 | A | 8.3ms single half sine-wave, JEDEC Method (Note3, Fig.6) | 1 | ||
| Operating junction and storage temperature range | TJ,TSTG | -65 | 150 | C | 1 | ||
| Breakdown voltage | BR | 53.3 | 58.9 | V | @IT = 1 mA (bidirectional row, shared UNI/BI row) | 1 | |
| Maximum clamping voltage | VC | 77.4 | V | @IPP = 5.2 A | 1 | ||
| Reverse leakage current | IR | 1 | uA | @VRWM | 1 | ||
| Reverse stand-off voltage | VRWM | 48 | V | 1 | |||
| Typical thermal resistance junction to lead | RthetaJL | 30 | C/W | Typical | 1 | ||
| Typical thermal resistance junction to ambient | RthetaJA | 120 | C/W | Typical; mounted on 5.0mm x 5.0mm copper pads (Note2) | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | 2. Mounted on 5.0mm×5.0mm (0.03mm thick) copper pads to each terminal. | 1 |
CAD (KiCad official)
- Symbol:
H1SMA48CAT3 - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
h1sma48cat3-etched.step/h1sma48cat3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h1sma48cat3.step/h1sma48cat3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
cc371022eefd52ac, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# H1SMA48CAT3
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SMA(DO-214AC)
H1SMA48CAT3 from HXY MOSFET, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SMA(DO-214AC) |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power dissipation | PPPM | | | 5.2 | W | 10/1000us waveform (Note1, Note2, Fig.1) | 1 |
| Steady state power dissipation | PM(AV) | | | 3.3 | W | TA=50C (Fig.5) | 1 |
| Peak forward surge current | IFSM | | | 60 | A | 8.3ms single half sine-wave, JEDEC Method (Note3, Fig.6) | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -65 | | 150 | C | | 1 |
| Breakdown voltage | BR | 53.3 | | 58.9 | V | @IT = 1 mA (bidirectional row, shared UNI/BI row) | 1 |
| Maximum clamping voltage | VC | | | 77.4 | V | @IPP = 5.2 A | 1 |
| Reverse leakage current | IR | | | 1 | uA | @VRWM | 1 |
| Reverse stand-off voltage | VRWM | | 48 | | V | | 1 |
| Typical thermal resistance junction to lead | RthetaJL | | 30 | | C/W | Typical | 1 |
| Typical thermal resistance junction to ambient | RthetaJA | | 120 | | C/W | Typical; mounted on 5.0mm x 5.0mm copper pads (Note2) | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | 2. Mounted on 5.0mm×5.0mm (0.03mm thick) copper pads to each terminal. | 1 |
## CAD (KiCad official)
- Symbol: `H1SMA48CAT3`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files: `h1sma48cat3-etched.step` / `h1sma48cat3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h1sma48cat3.step` / `h1sma48cat3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/h1sma48cat3-datasheet.pdf) (4 pp, sha256 `cc371022eefd52ac`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/h1sma48cat3-datasheet.pdf)