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H18VU10B
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hongjiacheng Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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H18VU10B
hongjiacheng · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
H18VU10B from hongjiacheng, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | bidirectional | Bidirectional ESD protection terminal of the H18VU10B, rated for a peak reverse working voltage of 18 V max and a junction capacitance of 0.6 pF max (typ 0.3 pF at VR=0V, f=1MHz). |
| 2 | 2 | bidirectional | Bidirectional ESD protection terminal of the H18VU10B, the other end of the bidirectional clamp, rated for ±15 kV air and ±8 kV contact ESD per IEC 61000-4-2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Reverse Working Voltage | VRWM | 18 | V | Ta=25℃ | 2 | ||
| Reverse Leakage Current | IR | 0.2 | μA | VR=18V,Ta=25℃ | 2 | ||
| Clamping Voltage | VC | 26 | V | IPP=1.0A, tp=8/20μs | 2 | ||
| Clamping Voltage | VC | 33 | V | IPP=2.5A,tp=8/20μs | 2 | ||
| Junction Capacitance | CJ | 0.3 | 0.6 | pF | VR=0V,f=1MHz | 2 | |
| Electrostatic Discharge Voltage (ESD per IEC 61000-4-2 Air) | VESD | -15 | 15 | KV | ESD per IEC 61000-4-2(Air) | 1 | |
| Electrostatic Discharge Voltage (ESD per IEC 61000-4-2 Contact) | VESD | -8 | 8 | KV | ESD per IEC 61000-4-2(Contact) | 1 | |
| Peak Pulse Power | PPP | 80 | W | tp = 8/20 µs | 1 | ||
| Rated Peak Pulse Current | IPP | 2.5 | A | tp = 8/20 µs | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 125 | ℃ | 1 | ||
| Operating Junction Temperature Range (storage, as printed for TSTG) | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
H18VU10B - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
h18vu10b-etched.step/h18vu10b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h18vu10b.step/h18vu10b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
3fe93d57de186567, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# H18VU10B
**hongjiacheng** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
H18VU10B from hongjiacheng, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | bidirectional | Bidirectional ESD protection terminal of the H18VU10B, rated for a peak reverse working voltage of 18 V max and a junction capacitance of 0.6 pF max (typ 0.3 pF at VR=0V, f=1MHz). |
| 2 | 2 | bidirectional | Bidirectional ESD protection terminal of the H18VU10B, the other end of the bidirectional clamp, rated for ±15 kV air and ±8 kV contact ESD per IEC 61000-4-2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Reverse Working Voltage | VRWM | | | 18 | V | Ta=25℃ | 2 |
| Reverse Leakage Current | IR | | | 0.2 | μA | VR=18V,Ta=25℃ | 2 |
| Clamping Voltage | VC | | | 26 | V | IPP=1.0A, tp=8/20μs | 2 |
| Clamping Voltage | VC | | | 33 | V | IPP=2.5A,tp=8/20μs | 2 |
| Junction Capacitance | CJ | | 0.3 | 0.6 | pF | VR=0V,f=1MHz | 2 |
| Electrostatic Discharge Voltage (ESD per IEC 61000-4-2 Air) | VESD | -15 | | 15 | KV | ESD per IEC 61000-4-2(Air) | 1 |
| Electrostatic Discharge Voltage (ESD per IEC 61000-4-2 Contact) | VESD | -8 | | 8 | KV | ESD per IEC 61000-4-2(Contact) | 1 |
| Peak Pulse Power | PPP | | | 80 | W | tp = 8/20 µs | 1 |
| Rated Peak Pulse Current | IPP | | | 2.5 | A | tp = 8/20 µs | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 125 | ℃ | | 1 |
| Operating Junction Temperature Range (storage, as printed for TSTG) | TSTG | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `H18VU10B`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `h18vu10b-etched.step` / `h18vu10b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `h18vu10b.step` / `h18vu10b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [hongjiacheng datasheet](docs/h18vu10b-datasheet.pdf) (3 pp, sha256 `3fe93d57de186567`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/h18vu10b-datasheet.pdf)