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GX817B-S

Public Made by Adom

by adom

GUOXIN JIAPIN SEMICONDUCTOR Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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GX817B-S

GUOXIN JIAPIN SEMICONDUCTOR · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm

GX817B-S from GUOXIN JIAPIN SEMICONDUCTOR, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive Anode of the infrared emitting diode; forward current max 60 mA, reverse voltage max 6 V.
2 Cathode passive Cathode of the infrared emitting diode; input side, shorted with pin 1 for the 5000 Vrms isolation test.
3 Emitter passive Emitter of the output phototransistor; emitter-collector voltage max 6 V.
4 Collector passive Collector of the output phototransistor; collector-emitter voltage max 35 V and collector current max 50 mA.

Key specifications

Parameter Value
Manufacturer GUOXIN JIAPIN SEMICONDUCTOR
Package SOP-4-2.54mm
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward current IF 60 mA 2
Peak forward current IFP 1 A 1us, pulse 2
Reverse voltage VR 6 V 2
Power dissipation (input) PD 100 mW 2
Power dissipation (output) PC 150 mW 2
Collector current IC 50 mA 2
Collector-Emitter voltage VCEO 35 V 2
Emitter-Collector voltage VECO 6 V 2
Total power dissipation PTOT 200 mW 2
Isolation voltage VISO 5000 V rms AC for 1 minute, R.H.=40~60% R.H.; pins 1,2 shorted and pins 3,4 shorted 2
Operating temperature TOPR -55 110 °C 2
Storage temperature TSTG -55 125 °C 2
Soldering temperature TSOL 260 °C For 10 seconds 2
Forward voltage VF 1.2 1.4 V IF = 20mA 3
Reverse current IR 10 µA VR = 4V 3
Input capacitance Cin 30 250 pF V = 0, f = 1kHz 3
Collector-Emitter dark current ICEO 100 nA VCE = 20V, IF = 0mA 3
Collector-Emitter breakdown voltage BVCEO 35 V IC = 0.1mA 3
Emitter-Collector breakdown voltage BVECO 6 V IE = 0.1mA 3
Current transfer ratio (GX817B rank) CTR 130 260 % IF = 5mA, VCE = 5V 3
Collector-Emitter saturation voltage VCE(sat) 0.1 0.2 V IF = 20mA, IC = 1mA 3
Floating capacitance CIO 0.6 1 pF VIO = 0, f = 1MHz 3
Rise time tr 18 µs VCE = 2V, IC = 2mA 3
Fall time tf 18 µs RL = 100, VCE = 2V, IC = 2mA 3

CAD (KiCad official)

  • Symbol: GX817B-S
  • Footprint: Package_SO:SOP-4_3.8x4.1mm_P2.54mm
  • 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
  • 3D model files: gx817b-s-etched.step / gx817b-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gx817b-s.step / gx817b-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GUOXIN JIAPIN SEMICONDUCTOR datasheet (13 pp, sha256 46c214d879f1abb3, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF