component
GX817B
Public Made by Adomby adom
GUOXIN JIAPIN SEMICONDUCTOR Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownGX817B
GUOXIN JIAPIN SEMICONDUCTOR · Transistor, Photovoltaic Output Optoisolators · DIP-4
GX817B from GUOXIN JIAPIN SEMICONDUCTOR, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Infrared emitting diode anode; the input forward current IF is rated at 60 mA maximum, with a peak forward current of 1 A for 1 µs pulses. |
| 2 | Cathode | passive | Infrared emitting diode cathode; the input reverse voltage VR is rated at 6 V maximum. |
| 3 | Emitter | passive | Phototransistor emitter; the emitter-collector voltage VECO is rated at 6 V maximum. |
| 4 | Collector | passive | Phototransistor collector; the collector current IC is rated at 50 mA maximum and the collector-emitter voltage VCEO at 35 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GUOXIN JIAPIN SEMICONDUCTOR |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.2 | 1.4 | V | IF = 20mA | 3 | |
| Reverse current | IR | 10 | µA | VR = 4V | 3 | ||
| Input capacitance | Cin | 30 | 250 | pF | V = 0, f = 1kHz | 3 | |
| Collector-Emitter dark current | ICEO | 100 | nA | VCE = 20V, IF = 0mA | 3 | ||
| Collector-Emitter breakdown voltage | BVCEO | 35 | V | IC = 0.1mA | 3 | ||
| Emitter-Collector breakdown voltage | BVECO | 6 | V | IE = 0.1mA | 3 | ||
| Current transfer ratio (rank B, GX817B) | CTR | 130 | 260 | % | IF = 5mA, VCE = 5V | 3 | |
| Collector-Emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF = 20mA, IC = 1mA | 3 | |
| Floating capacitance | CIO | 0.6 | 1 | pF | VIO = 0, f = 1MHz | 3 | |
| Cut-off frequency | fc | 80 | kHz | VCE = 5V, IC = 2mA, RL = 100, -3dB | 3 | ||
| Rise time | tr | 18 | µs | VCE = 2V, IC = 2mA, RL = 100 | 3 | ||
| Fall time | tf | 18 | µs | RL = 100 | 3 | ||
| Forward current | IF | 60 | mA | 2 | |||
| Peak forward current | IFP | 1 | A | 1us, pulse | 2 | ||
| Reverse voltage | VR | 6 | V | 2 | |||
| Power dissipation (input) | PD | 100 | mW | 2 | |||
| Derating factor, input power dissipation | PD | 2.9 | mW/°C | above Ta = 100°C | 2 | ||
| Power dissipation (output) | PC | 150 | mW | 2 | |||
| Derating factor, output power dissipation | PC | 5.8 | mW/°C | above Ta = 100°C | 2 | ||
| Collector current | IC | 50 | mA | 2 | |||
| Collector-Emitter voltage | VCEO | 35 | V | 2 | |||
| Emitter-Collector voltage | VECO | 6 | V | 2 | |||
| Total power dissipation | PTOT | 200 | mW | 2 | |||
| Isolation voltage | VISO | 5000 | V rms | AC for 1 minute, R.H. 40~60%, pins 1-2 and 3-4 shorted | 2 | ||
| Operating temperature | TOPR | -55 | 110 | °C | 2 | ||
| Storage temperature | TSTG | -55 | 125 | °C | 2 | ||
| Soldering temperature | TSOL | 260 | °C | 10 seconds | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | 1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile Note: Reference: IPC/JEDEC J-STD-020D | 12 | |
| contacts | copper | F = Lead frame option (F: Iron, None: copper) | 6 |
CAD (KiCad official)
- Symbol:
GX817B - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
gx817b-etched.step/gx817b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gx817b.step/gx817b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GUOXIN JIAPIN SEMICONDUCTOR datasheet (13 pp, sha256
38b6b79de6e2c050, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).