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GUS1MW
Public Made by Adomby adom
Shandong Jingdao Microelectronics Diodes - Fast Recovery Rectifiers, SOD-123FL. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGUS1MW
Shandong Jingdao Microelectronics · Diodes - Fast Recovery Rectifiers · SOD-123FL
GUS1MW from Shandong Jingdao Microelectronics, in a SOD-123FL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the rectifier diode, pin 1 in the PINNING table, for a device rated 1000 V repetitive peak reverse voltage and 1 A average forward current. |
| 2 | Anode | passive | Anode terminal of the rectifier diode, pin 2 in the PINNING table, paired with the cathode at pin 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-123FL |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 1000 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 700 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 1000 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | at Tc = 125 °C | 1 | ||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3 ms single half sine wave superimposed on rated load (JEDEC method) | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 1.65 | V | at 1 A | 1 | ||
| Maximum DC Reverse Current | IR | 5 | μA | Ta = 25 °C, at rated DC blocking voltage | 1 | ||
| Maximum DC Reverse Current | IR | 100 | μA | Ta = 125 °C, at rated DC blocking voltage | 1 | ||
| Maximum Reverse Recovery Time | trr | 75 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 1 | ||
| Operating and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Typical Thermal Resistance | RθJA | 85 | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
GUS1MW - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123FL (KiCad packages3D, STEP)
- 3D model files:
gus1mw-etched.step/gus1mw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gus1mw.step/gus1mw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
9914631016122b22, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).