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GT650N15K

Public Made by Adom

by adom

GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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GT650N15K

GOFORD · MOSFETs · TO-252

GT650N15K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with a maximum gate-source voltage of ±20 V and a threshold VGS(th) of 2.5 V min to 4.5 V max.
2 D passive Drain, connected to the exposed tab; drain-source voltage rating is 150 V and continuous drain current is 20 A.
3 S passive Source; carries the 20 A continuous current and the body diode conducts to the drain with VSD up to 1.2 V at 10 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 150 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 2.5 3.3 4.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 59 65 mΩ VGS = 10V, ID = 10A 2
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Continuous Body Diode Current IS 20 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 10A, VGS = 0V 2
Input Capacitance Ciss 600 pF VGS = 0V, VDS = 75V, f = 1.0MHz 2
Output Capacitance Coss 74.7 pF VGS = 0V, VDS = 75V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 10.8 pF VGS = 0V, VDS = 75V, f = 1.0MHz 2
Total Gate Charge Qg 12 nC VDS = 75V, ID = 10A, VGS = 10V 2
Gate-Source Charge Qgs 5.7 nC 2
Gate-Drain Charge Qgd 2.7 nC 2
Turn-on Delay Time td(on) 9.5 ns VDD=75V, RL=7.5Ω, VGS=10V, RG=3Ω 2
Turn-on Rise Time tr 5.5 ns 2
Turn-off Delay Time td(off) 12.5 ns 2
Turn-off Fall Time tf 3 ns 2
Reverse Recovery Time trr 29 ns IF=IS, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 130 nC 2
Drain-Source Voltage VDS 150 V TC = 25ºC, unless otherwise noted 1
Continuous Drain Current ID 20 A TC = 25ºC, unless otherwise noted 1
Pulsed Drain Current IDM 80 A Note 1: pulse width limited by maximum junction temperature 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC, unless otherwise noted 1
Power Dissipation PD 68 W TC = 25ºC, unless otherwise noted 1
Single pulse avalanche energy EAS 65 mJ Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 ºC 1
Thermal Resistance, Junction-to-Case RthJC 2.2 ºC/W Note 3: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: GT650N15K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: gt650n15k-etched.step / gt650n15k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt650n15k.step / gt650n15k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 1fc915a17fbe971e, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF