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Contents

README

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GT60N10

GOFORD · MOSFETs · TO-220

GT60N10 from GOFORD, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±18 V maximum and threshold of 1 V min to 3 V max at 250 µA.
2 D passive Drain, also connected to the mounting tab; rated for VDS of 100 V and continuous ID of 75 A (300 A pulsed).
3 S passive Source; body diode continuous current is 75 A and pulsed 300 A, with VSD up to 1.2 V at 20 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V, TJ = 25ºC 2
Gate-Source Leakage IGSS -200 200 nA VGS = ±18V 2
Gate-Source Threshold Voltage VGS(th) 1 2.2 3 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 7.1 9.5 mΩ VGS = 10V, ID = 4A 2
Continuous Body Diode Current IS 75 A TC = 25ºC 2
Pulsed Diode Forward Current ISM 300 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 20A, VGS = 0V 2
Drain-Source Voltage VDS 100 V TC = 25ºC 1
Continuous Drain Current ID 75 A TC = 25ºC 1
Pulsed Drain Current IDM 300 A TC = 25ºC, note1 1
Gate-Source Voltage VGS -18 18 V TC = 25ºC 1
Power Dissipation PD 107 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 12 ºC/W 1
Thermal Resistance, Junction-to-Case RthJC 1.1 ºC/W 1
Forward Transconductance gFS 62 S VDS=5V,ID=20A 2
Input Capacitance Ciss 2785 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 238 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 12 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 37 nC VDD = 50V, ID = 20A, VGS = 10V 2
Gate-Source Charge Qgs 11.5 nC VDD = 50V, ID = 20A, VGS = 10V 2
Gate-Drain Charge Qgd 5 nC VDD = 50V, ID = 20A, VGS = 10V 2
Turn-on Delay Time td(on) 13 nS VDD = 50V, ID = 20A, RG = 3Ω 2
Turn-on Rise Time tr 8.5 nS VDD = 50V, ID = 20A, RG = 3Ω 2
Turn-off Delay Time td(off) 29 nS VDD = 50V, ID = 20A, RG = 3Ω 2
Turn-off Fall Time tf 4 nS VDD = 50V, ID = 20A, RG = 3Ω 2

CAD (KiCad official)

  • Symbol: GT60N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: gt60n10-etched.step / gt60n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt60n10.step / gt60n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 c0cb4f836032dd94, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF