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GT130N10M

Public Made by Adom

by adom

GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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GT130N10M

GOFORD · MOSFETs · TO-263

GT130N10M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) of 2.0 to 4.0 V (typ 3.0 V) and an absolute maximum VGS of ±20 V.
2 D passive Drain, the middle lead (shorter in the package drawing) and connected to the metal tab; rated for VDS of 100 V and continuous ID of 60 A (240 A pulsed).
3 S passive Source; carries the 60 A continuous current and the body-diode current (IS 60 A, VSD max 1.2 V).

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 9.5 12 mΩ VGS = 10V, ID = 20A 2
Continuous Body Diode Current IS 60 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 20A, VGS = 0V 2
Drain-Source Voltage VDS 100 V TC = 25ºC 1
Continuous Drain Current ID 60 A TC = 25ºC 1
Pulsed Drain Current IDM 240 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 73.5 W TC = 25ºC 1
Single pulse avalanche energy EAS 43 mJ TC = 25ºC; Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 1.7 ºC/W 1
Forward Transconductance gFS 35 S VGS = 5V, ID = 20A 2
Input Capacitance Ciss 1222 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 457 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 24 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 18 nC VDD = 50V, ID = 20A, VGS = 10V 2
Gate-Source Charge Qgs 6 nC VDD = 50V, ID = 20A, VGS = 10V 2
Gate-Drain Charge Qgd 3.8 nC VDD = 50V, ID = 20A, VGS = 10V 2
Turn-on Delay Time td(on) 8 ns VDD = 50V, ID = 20A, RG = 1.6Ω 2
Turn-on Rise Time tr 14 ns VDD = 50V, ID = 20A, RG = 1.6Ω 2
Turn-off Delay Time td(off) 12 ns VDD = 50V, ID = 20A, RG = 1.6Ω 2
Turn-off Fall Time tf 3 ns VDD = 50V, ID = 20A, RG = 1.6Ω 2
Reverse Recovery Charge Qrr 128 nC IF = 20A, VGS = 0V, di/dt=500A/us 2
Reverse Recovery Time Trr 24 ns IF = 20A, VGS = 0V, di/dt=500A/us 2

CAD (KiCad official)

  • Symbol: GT130N10M
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: gt130n10m-etched.step / gt130n10m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt130n10m.step / gt130n10m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 73a70b816121ffcb, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF